Results 141 to 150 of about 34,747 (249)

Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Small, EarlyView.
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis, Filimon Zacharatos, Avraham Twitto, Michal Poplinger, Adi Levi, Amaia Pesquera, Amaia Zurutuza, Iakovos Kritikos, Stefania Skorda, Alexandros El Sachat, Yuri Mikhlin, Doron Naveh, Ioanna Zergioti   +12 more
wiley   +1 more source

Silver‐enhanced Photoresponsive g‐C3N4/Ag Janus Microrobots With Negative Photogravitaxis Efficient Antibiotic Degradation

Small, EarlyView.
ABSTRACT Water pollution remains a serious global challenge; hence, the efficient, low‐cost, and environmentally friendly removal of pollutants from water has become a research hotspot. Photocatalytic microrobots can achieve autonomous movement and generate reactive oxygen species (ROS), presenting a great opportunity for water purification.
Yunhuan Yuan, Vinicius Tadeu Santana, Stanisław Wacławek, Michal Mazur, Martin Pumera   +4 more
wiley   +1 more source

Gallium Nitride‐Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform

Small, EarlyView.
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider, Batool Esmat, Ali Raza Kashif, Muhammad Shahid Khan, Akif Safeen, Basit Ali Khan, Karim Khan, Basit Ali   +7 more
wiley   +1 more source

Diamond Schottky barrier diodes

, 2010
Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high ...
openaire   +1 more source

AstroECP: towards more practical electron channeling contrast imaging

Journal of Applied Crystallography, EarlyView.
We explore and address many of the major challenges associated with using electron channeling contrast imaging in a scanning electron microscope, with the goal of more easily revealing and characterizing crystalline defects such as dislocations.Electron channeling contrast imaging (ECCI) is a scanning electron microscope based technique which enables ...
M. Haroon Qaiser, Lukas Berners, Robin J. Scales, Tianbi Zhang, Martin Heller, Jiří Dluhoš, Sandra Korte-Kerzel, T. Ben Britton   +7 more
wiley   +1 more source

Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes

Advanced Electronic Materials
The intrinsic high non‐linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem.
Zhanibek Bizak, Harold F. Mazo‐Mantilla, Linqu Luo, Camelia Florica, Georgian Melinte, Thomas D. Anthopoulos, Khaled N. Salama   +6 more
doaj   +1 more source

Highly Fast Response of Pd/Ta₂O₅/SiC and Pd/Ta₂O₅/Si Schottky Diode-Based Hydrogen Sensors. [PDF]

Sensors (Basel), 2021
Hussain M, Jeong W, Kang IS, Choi KK, Jaffery SHA, Jaffery SHA, Ali A, Hussain T, Ayaz M, Hussain S, Jung J.   +10 more
europepmc   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Perovskite‐based time‐domain signal‐balancing LiDAR sensor with centimeter depth resolution

InfoMat, Volume 8, Issue 4, April 2026.
In this study, we present a monolithic high‐speed perovskite‐based photodetector capable of directly sensing the time delay between two light pulses with a temporal resolution of at least 170 ps. This outstanding time resolution is achieved through a signal‐balancing detection scheme that effectively overcomes the limitations of conventional ...
Gebhard J. Matt, Vitalii Bartosh, Joshua R. S. Lilly, Vincent J.‐Y. Lim, Lorenzo J. A. Ferraresi, Daria Proniakova, Yuliia Kominko, Gytis Juška, Laura M. Herz, Sergii Yakunin, Maksym V. Kovalenko   +10 more
wiley   +1 more source

Nanoscale Graphene‐Based Ballistic Rectifiers for Detection of High Terahertz Frequency Optical Signals

Small Science, Volume 6, Issue 4, April 2026.
Ballistic graphene rectifier capable of operating at frequencies up to 3 THz, engineered through asymmetric nanojunction geometries in high‐mobility monolayer graphene encapsulated in hexagonal boron nitride Graphene exhibits the longest carrier mean free path of any known electronic material, yet only a few device concepts have successfully leveraged ...
Lili Shi, Leonardo Viti, Kenji Watanabe, Takashi Taniguchi, Miriam Serena Vitiello   +4 more
wiley   +1 more source