Results 11 to 20 of about 34,747 (249)

Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement [PDF]

Micromachines
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper.
Zenghui Liu, Xiaobo Zhang, Zhiwen Liang, Fengge Wang, Yanyan Xu, Xien Yang, Xin Li, Yisheng Liang, Lizhang Lin, Xiaodong Li, Wenbo Zhao, Xin Cao, Xinqiang Wang, Baijun Zhang   +13 more
doaj   +2 more sources

Silicon Nanowire-Based Schottky Diodes for Enhanced Temperature Sensing and Extended Operable Range [PDF]

Sensors
This paper analyzes microstructural layout and electrical behavior of silicon nanowire-based Schottky diodes, for use as wide-domain temperature sensors.
Gheorghe Pristavu, Razvan Pascu, Melania Popescu, Monica Simion, Cosmin Romanitan, Iuliana Mihalache, Florin Draghici, Gheorghe Brezeanu   +7 more
doaj   +2 more sources

A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery

IEEE Journal of the Electron Devices Society, 2021
A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li, Jingwei Guo, Zhi Lin, Shengdong Hu   +3 more
doaj   +1 more source

A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation

Electronics Letters, 2021
Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved.
Jian Li, Feng Lin, Yong Chen, Wei He, Xinke Liu   +4 more
doaj   +1 more source

Comparison between Up-Conversion Detection in Glow-Discharge Detectors and the Schottky Diode for MMW/THz High-Power Single Pulse

Applied Sciences, 2021
Generally, glow-discharge detectors (GDD), acting on miniature neon indicator lamps, and Schottky diode detectors serve as efficient, fast, and room-temperature millimeter wave (MMW)/THz detectors.
Adnan Haj Yahya, Avi Klein, Nezah Balal, Dmitri Borodin, Aharon Friedman   +4 more
doaj   +1 more source

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment [PDF]

, 2020
Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated
Baker, G. W. C., Bonyadi, Yeganeh, Dai, Tianxiang, Dudley, M., Gammon, P. M., Han, Yan, Hindmarsh, Steven A., Li, Fan, Liu, Y., Mawby, P. A. (Philip A.), Raghothamachar, B., Renz, A. B., Shah, V. A., Sharma, Y., Vavasour, Oliver J., Walker, Marc   +15 more
core   +1 more source

Graphene-Silicon Schottky Diodes [PDF]

Nano Letters, 2011
We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100,
Chun-Chung, Chen, Mehmet, Aykol, Chia-Chi, Chang, A F J, Levi, Stephen B, Cronin   +4 more
openaire   +2 more sources

UHF IGZO Schottky diode [PDF]

2012 International Electron Devices Meeting, 2012
High-performance Schottky diodes based on amorphous IGZO (Indium-Gallium-Zinc Oxide) semiconductor were fabricated and fully characterized. S-parameter measurements and subsequent analysis prove that these diodes have a cut-off frequency over 900MHz at 0V bias, making these diodes a promising choice for UHF applications, such as energy-harvesters for ...
Vaisman Chasin, Adrian Nelson, Steudel, Soeren, Vanaverbeke, Fre, Myny, Kris, Manog, Nag, T.H., Ke, Schols, Sarah, Gielen, Georges, Genoe, Jan, Heremans, Paul   +9 more
openaire   +2 more sources

Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications

Micromachines, 2022
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V)
Moath Alathbah
doaj   +1 more source

Doping-Less SiC p-i-n Diode: Design and Investigation

IEEE Access, 2021
We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
doaj   +1 more source