Results 191 to 200 of about 34,747 (249)
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Single-Dislocation Schottky Diodes
Nano Letters, 2021Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped
Ang Tao +9 more
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Physical Review Letters, 1994
A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$$
, Blom, , Wolf, , Cillessen, , Krijn
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A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$$
, Blom, , Wolf, , Cillessen, , Krijn
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Molecules that mimic Schottky diodes
Physical Chemistry Chemical Physics, 2006Self-assembled monolayers of cationic donor-(pi-bridge)-acceptor dyes coupled with anionic donors exhibit asymmetric current-voltage (I-V) characteristics when contacted by Au or PtIr probes. Rectification ratios of 3000 at +/- 1 V are obtained from Au-S-C10H20-A+-pi-D|D-|Au structures in which the cationic moiety is 5-(4-dimethylaminobenzylidene)-5,6 ...
Geoffrey J, Ashwell +2 more
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Carbon–Silicon Schottky Barrier Diodes
Small, 2012The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained.
Chanyoung, Yim +4 more
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ECS Meeting Abstracts, 2012
Abstract not Available.
Randy P. Tompkins +9 more
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Abstract not Available.
Randy P. Tompkins +9 more
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Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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Modelling Power Schottky Diodes
2006 International Conference - Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006This paper is concerned with modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal macromode) of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.
Janusz Zarebski, Jacek Dabrowski
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Gold/Ga0.85Al0.15Sb Schottky diodes
Journal of Applied Physics, 1985Gold on n-type Ga0.85Al0.15Sb devices were prepared and characterized. Current versus voltage (I-V) and capacitance versus voltage (C-V) measurements are discussed following the classical models of thermionic field emission and metal-insulator-semiconductor devices.
L. Gouskov +5 more
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1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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IEEE Transactions on Microwave Theory and Techniques, 1977
The super-Schottky-barrier diode, a superconductor-semiconductor tunneling junction, has been established as the most sensitive detector of microwaves. These record sensitivities were obtained in both the video and mixing modes of operation. Measurements at X-band have yielded a video NEP of 5 x 10/sup -16/ W/Hz/sup 1/2/ and a mixer input noise ...
F.L. Vernon +5 more
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The super-Schottky-barrier diode, a superconductor-semiconductor tunneling junction, has been established as the most sensitive detector of microwaves. These record sensitivities were obtained in both the video and mixing modes of operation. Measurements at X-band have yielded a video NEP of 5 x 10/sup -16/ W/Hz/sup 1/2/ and a mixer input noise ...
F.L. Vernon +5 more
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