Results 21 to 30 of about 34,747 (249)
Resistive random access memories (RRAMs) are favorable contenders in the race towards future technologies. Moreover, the desirable properties of memristor-based RRAM devices make them very good competitors in this field. The sneak paths problem poses one
Fatih Gül
doaj +1 more source
Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada +4 more
doaj +1 more source
A study of temperature-related non-linearity at the metal-silicon interface [PDF]
In this paper, we investigate the temperature dependencies of metal-semiconductor interfaces in an effort to better reproduce the current-voltage-temperature (IVT) characteristics of any Schottky diode, regardless of homogeneity.
A. Pérez-Tomás +11 more
core +1 more source
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au ...
Abdul Manaf Hashim +3 more
doaj +1 more source
Graphene–Silicon Schottky Diodes for Photodetection [PDF]
5 pages, 9 ...
Di Bartolomeo, Antonio +4 more
openaire +2 more sources
Metal silicide/poly-Si Schottky diodes for uncooled microbolometers [PDF]
Nickel silicide Schottky diodes formed on polycrystalline Si films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays.
Chapnin, V. A. +5 more
core +2 more sources
The microwave wireless power transfer is a power transmission device that breaks through the limitation of the transmission line, and is helpful for handling equipment power supply problems in complex scenes.
Xiao Zhai +4 more
doaj +1 more source
Current – voltage measurements of Al/a-Se/Au Schottky diode solar cells
Schottky diode Al/a-Se/Au as solar cells (SC) were made up by thermal evaporation technique (TET) on glass thin slide at a substrate under vacuum (vacuum value equal to mbar).
Mayyada Fdhala +4 more
doaj +1 more source
Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang +7 more
doaj +1 more source
4H-SiC trench MOSFET with integrated fast recovery MPS diode [PDF]
A 4H-SiC trench metal-oxide-semiconductor field-effect-transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time.
Chan, Chun Wa +6 more
core +1 more source

