Results 41 to 50 of about 34,747 (249)

Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters

Scientific Reports, 2021
A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB ...
Evangelos Vassos, James Churm, Jeff Powell, Colin Viegas, Byron Alderman, Alexandros Feresidis   +5 more
doaj   +1 more source

A 100-element planar Schottky diode grid mixer [PDF]

, 1992
The authors present a Schottky diode grid mixer suitable for mixing or detecting quasi-optical signals. The mixer is a planar bow-tie grid structure periodically loaded with diodes.
De Lisio, Michael P., Hacker, Jonathan B., Kim, Moonil, Rutledge, David B., Weikle, Robert M., II   +4 more
core   +1 more source

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

Sensors, 2021
A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the ...
Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Philippe Godignon, Cosmin Romanitan, Matei Serbanescu, Adrian Tulbure   +7 more
doaj   +1 more source

Scaling of nano-Schottky-diodes

, 2002
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional ...
Klapwijk, T. M., Rogge, S., Smit, G. D. J.   +2 more
core   +2 more sources

Diamond semiconductor technology for RF device applications [PDF]

, 2005
This paper presents a comprehensive review of diamond electronics from the RF perspective. Our aim was to find and present the potential, limitations and current status of diamond semiconductor devices as well as to investigate its suitability for RF ...
Davidson, Jimmy L., Esame, İbrahim Onur, Gürbüz, Yaşar, Kang, Weng Poo, Tekin, İbrahim   +4 more
core   +1 more source

GaN Nanowire Schottky Barrier Diodes

IEEE Transactions on Electron Devices, 2017
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices.
Gourab Sabui, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, Z. John Shen   +7 more
openaire   +4 more sources

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes [PDF]

, 2015
Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range ...
A. Sciuto, A.M. Barnett, Barth, Bertuccio, Cai, Cha, Chen, Chen, Cheung, Drost, G. Lioliou, Gramberg, Hu, Kittl, M.C. Mazzillo, Mazzillo, Mazzillo, Monroy, Park, Prasai, Razeghi, Roccaforte, Roccaforte, Sciuto, Sciuto, Sridhara, Tung, Watanabe, Yan   +28 more
core   +1 more source

Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Walailak Journal of Science and Technology, 2018
Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with
Doldet TANTRAVIWAT, Wittawat YAMWONG, Udom TECHAKIJKAJORN, Kazuo IMAI, Burapat INCEESUNGVORN   +4 more
doaj   +1 more source

Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

IEEE Journal of the Electron Devices Society, 2020
A practical model, adequate for full reproduction of inhomogeneous Schottky diodes' forward characteristics over wide high-temperature and bias ranges, is proposed.
Gheorghe Brezeanu, Gheorghe Pristavu, Florin Draghici, Razvan Pascu, Francesco Della Corte, Simone Rascuna   +5 more
doaj   +1 more source

Theoretical and Experimental Studies of Schottky Diodes That Use Aligned Arrays of Single Walled Carbon Nanotubes [PDF]

, 2010
We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube
A. A. Pesetski, A. Bachtold, A. Javey, A. Javey, C. Kocabas, C. Kocabas, C. Kocabas, C. W. Zhou, D. Abdula, D. Perello, E. Cobas, Frank Du, H. M. Manohara, J. U. Lee, J. U. Lee, Jana Zaumseil, John A. Rogers, K. Bosnick, L. Amlani, Lina Ye, S. J. Kang, S. M. Sze, S. Wang, S. Wang, S. Wolfram, Simon Dunham, Slava V. Rotkin, T. C. Banwell, T. Low, W. Kim, W. Schottky, W. Shockley, X. J. Zhou, X. N. Ho, Xinning Ho, Xu Xie, Y. F. Huang, Y. Nosho, Y. Nosho, Y. Yaish, Z. Y. Zhang   +40 more
core   +2 more sources