Results 61 to 70 of about 34,747 (249)

Effects of Bulk and Surface Conductivity on the Performance of CdZnTe Pixel Detectors [PDF]

open access: yes, 2001
We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different ...
Bolotnikov, Aleksey E.   +5 more
core   +2 more sources

Cross‐Layer Molecular Design for Coherent Interface Passivation in Rigid and Flexible Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
A cross‐layer passivation strategy employing molecularly designed thiazol‐5‐ylmethanamine hydrochloride (TMACl) enables coherent defect regulation at the SnO2/perovskite interface, stabilizes both layers, promotes phase‐pure α‐FAPbI3 formation, and enhances charge extraction, delivering PCEs of 26.44% in rigid and 24.72% in flexible perovskite solar ...
Fan Shen   +16 more
wiley   +1 more source

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

open access: yesInternational Journal of Energetica, 2020
In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj  

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

open access: yesAIP Advances, 2015
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface.
Arjun Shetty   +6 more
doaj   +1 more source

Compact high‐efficiency c‐band rectifier with high input power for microwave power transmission

open access: yesElectronics Letters, 2023
This letter presents a novel C‐band rectifier that is capable of handling high input power. The rectifier consists of a Schottky diode, an impedance matching circuit with a compensation microstrip structure, and an output filter with harmonic suppression
Hongzheng Zeng, Yuzhu Tang, Yunpeng Liu
doaj   +1 more source

Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV

open access: yes, 2017
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional
Chabak, Kelson D.   +6 more
core   +2 more sources

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

High isolation RF signal selection switches [PDF]

open access: yes, 1974
A selection switch with high isolation between RF signal input terminals is achieved with a gated Schmitt trigger circuit feeding into a control NAND gate in each signal switching channel.
Detweiler, H. K., Hanna, M. F.
core   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

open access: yesIEEE Access, 2020
In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is ...
Yilin Yang   +6 more
doaj   +1 more source

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