Ideal Graphene/Silicon Schottky Junction Diodes [PDF]
Nano Letters, 2014 The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin ...
Sinha, Dhiraj, Lee, Ji Ung
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Single‐Chromophore Homojunction Organic Solar Cells: A Path to Simplicity and Efficiency
Advanced Materials, EarlyView.This perspective discusses how the intrinsic optoelectronic properties of organic semiconductors, their molecular packing in the solid‐state, and internal energetic gradients within a device can enable free‐charge carrier generation in homojunction organic solar cells.
Shaun McAnally +2 more
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Method and means for generation of tunable laser sidebands in the far-infrared region [PDF]
, 1987 A method for generating tunable far-infrared radiation is described. The apparatus includes a Schottky-barrier diode which has one side coupled through a conductor to a waveguide that carries a tunable microwave frequency; the diode has an opposite side ...
Farhoomand, Jam, Pickett, Herbert M.
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Single‐Atom Photocatalyst as Floatable Artificial Leaf for Upcycling Oceanic Plastic Waste
Advanced Materials, EarlyView.To resolve the catastrophic disaster of oceanic plastic pollution, the novel Ru single atom loaded ZnIn2S4 photocatalysts, in the forms of powder or floatable artificial leaf, were prepared for direct conversion of raw polypropylene plastic into valuable chemicals. The optimized catalyst exhibits exceptional performance, with a total formic/acetic acid
Amin Talebian‐Kiakalaieh +6 more
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Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode [PDF]
Журнал нано- та електронної фізики, 2012 In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature.
Vibhor Kumar +3 more
doaj
Beilstein Journal of Nanotechnology, 2016 A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere.
Ivan Shtepliuk +5 more
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A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes
Micromachines, 2019 This paper describes the design and demonstration of a 135−190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, the diodes are biased in resistive mode by a self-bias resistor; thus, no ...
Chengkai Wu +5 more
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Advances in Halide Perovskites for Photon Radiation Detectors
Advanced Materials Technologies, EarlyView.This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
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A user oriented computer program for the analysis of microwave mixers, and a study of the effects of the series inductance and diode capacitance on the performance of some simple mixers [PDF]
A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance
Kerr, A. R., Siegel, P. H.
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Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, EarlyView.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
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