Results 81 to 90 of about 34,747 (249)

Controlling Film Formation in Inkjet‐printed MAPbBr3 Through Graphene Incorporation for Enhanced Photodetection

Advanced Materials Technologies, EarlyView.
This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo, Javier Bartolomé, María Vila, Giovanni Vescio, Raúl I. Sánchez‐Alarcón, Junaid Khan, Júlia Marí Guaita, Francisco Palacio Bonet, Juan P. Martínez‐Pastor, Sergi Hernández, Blas Garrido, Carmen Coya, Albert Cirera   +12 more
wiley   +1 more source

Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

, 2012
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature ...
Appenzeller J., Appenzeller J., Asenov A., Bachtold A., Bjork M. T., Bucher E., Cai W., Chen Z., Cui Y., Derycke V., Gambino J., Gentile P., Georgios Katsaros, Heinzig A., Huang Y., Iwai H., Koren E., Lee J. U., Leonard F., Martin D., Massimo Mongillo, McAlpine M. C., Morimoto T., Mueller T., Murarka S. P., Panayotis Spathis, Pascal Gentile, Patolsky F., Perea D. E., Pierre M., Silvano De Franceschi, Storm K., Tung R. T., Weber W. M., Yang C., Yang C., Yang W.   +36 more
core   +3 more sources

Dirac Surface‐State Driven Broad Spectral Band Low Quantum Energy Photoresponse in Quaternary Topological BiSbSe2Te

Advanced Science, EarlyView.
Quaternary topological BiSbSe2Te are synthesized and demonstrates a broad spectral band photoresponse, ranging from infrared to terahertz and to millimeter waves, with a particular excellence on detection of low quantum energy terahertz photons. The observed photoresponse is attributed to the excitation of plasmonic nonequilibrium electrons originating
Tianning Zhang, Jinchao Tong, Jiantian Zhang, Peng Yu, Heng Luo, Luo Yan, Boyu Yang, Tiantian Huang, Junhui Ran, Yan Chen, Liujiang Zhou, Xin Chen, Ning Dai, Jianlu Wang, Junhao Chu   +14 more
wiley   +1 more source

Schottky Contact of Gallium on p-Type Silicon [PDF]

Журнал нано- та електронної фізики, 2011
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
doaj  

Investigation of significantly high barrier height in Cu/GaN Schottky diode

AIP Advances, 2016
Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg, Ashutosh Kumar, S. Nagarajan, M. Sopanen, R. Singh   +4 more
doaj   +1 more source

Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering

Micro and Nano Engineering, 2019
A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films
S. Fareed, Arifa Jamil, N. Tiwari, M.A. Rafiq   +3 more
doaj   +1 more source

A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications [PDF]

A new Schottky diode is investigated for use as a multiplier element in the millimeter and submillimeter wavelength regions. The new diode is based on the Schottky contact at the edge of a 2-dimensional electron gas (2-DEG).
Crowe, Thomas W., Gelmont, B., Peatman, W. C. B., Shur, M.   +3 more
core   +1 more source

Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN [PDF]

, 2011
We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
Nanda, Kumar Reddy N., Rajagopal, Reddy V.   +1 more
core  

Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

, 2003
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor.
A.F. Isakovic, A.G. Aronov, A.T. Hanbicki, B.T. Jonker, D. L. Smith, D.L. Smith, E.I. Rashba, E.I. Rashba, G. Schmidt, G.L. Bir, H.J. Zhu, J. D. Albrecht, J.D. Albrecht, P.C. van Son, R. Fiederling, R.M. Stroud, V.F. Motsnyi, V.P. Varshni, V.P. Varshni, Z.G. Yu   +19 more
core   +1 more source

Tuning Li+ and Na+ Functionality in Renewable Carbon Electroactive Material Through Site‐Specific Nanostructural Disorder

Advanced Science, EarlyView.
This study presents a selective thermal transformation of polycarbonate into hybrid carbon materials. The structured carbon enhances electrochemical performance, particularly in lithium‐ion systems. Investigations reveal improved bimetallic ion diffusivity through the hybrid microstructure, contributing to excellent charge kinetics.
Montajar Sarkar, Rumana Hossain, Jian Peng, Dilan Kumara Thilakarathna, Yu Wang, Yin Yao, Neeraj Sharma, Veena Sahajwalla   +7 more
wiley   +1 more source