Results 1 to 10 of about 1,030 (185)
Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET [PDF]
Micromachines, 2019 Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (
Hui Li +5 more
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A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance [PDF]
MicromachinesIn this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma +8 more
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Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs [PDF]
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021 In this paper, a comprehensive comparative analysis is performed on the short circuit (SC) withstand time and failure modes between a 650 V SiC Planar MOSFET, a 650 V SiC Trench MOSFET and a 650 V SiC Cascode JFET. The short circuit tests have been performed at a DC link voltage of 400 V with gate turn-OFF voltages at 0 V and -5 V.
Bashar, Erfan +6 more
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Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
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A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET
Energies, 2021 Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity.
Hongyan Zhao +3 more
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IEEE Open Journal of Power Electronics, 2021 In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using ...
Juefei Yang +5 more
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e-Prime - Advances in Electrical Engineering, Electronics and Energy, 2023 SiC MOSFTEs are widely used nowadays for a large number of power applications. Even though they are more performant than their Silicon counterpart, they suffer from some issues which are still unsolved. Among these, the high traps concentration existing at the SiC/SiO2 interface is one of the main concerns while evaluating the device performance.
Matacena I. +5 more
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High Frequency Multipurpose SiC MOSFET Driver
Advances in Electrical and Electronic Engineering, 2021 This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters.
Strossa, Jan +4 more
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Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2022 High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities.
Dawid Zięba, Jacek Rąbkowski
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Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch
IEEE Access, 2023 SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and ...
Haihong Qin +6 more
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