Results 1 to 10 of about 13,057 (202)

Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET [PDF]

Micromachines, 2019
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (
Hui Li, Renze Yu, Yi Zhong, Ran Yao, Xinglin Liao, Xianping Chen   +5 more
doaj   +2 more sources

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress [PDF]

Micromachines, 2023
In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is
Haihong Qin, Zhenhua Ba, Sixuan Xie, Zimo Zhang, Wenming Chen, Qian Xun   +5 more
doaj   +2 more sources

A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory [PDF]

IEEE Transactions on Industrial Electronics, 2017
The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC MOSFET) are of great interest because they can work at higher switching frequency ...
Alejandro Paredes Camacho, Hamidreza Ghorbani, Jose Luis Romeral Martinez   +2 more
exaly   +4 more sources

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance [PDF]

Micromachines
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao, Shengdong Hu   +8 more
doaj   +2 more sources

Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs [PDF]

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021
In this paper, a comprehensive comparative analysis is performed on the short circuit (SC) withstand time and failure modes between a 650 V SiC Planar MOSFET, a 650 V SiC Trench MOSFET and a 650 V SiC Cascode JFET. The short circuit tests have been performed at a DC link voltage of 400 V with gate turn-OFF voltages at 0 V and -5 V.
Bashar, Erfan, Wu, Ruizhu, Agbo, Nereus, Mendy, Simon, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M.   +6 more
openaire   +3 more sources

Recent research progress of single particle effect of SiC MOSFET

He jishu, 2022
With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui, GUO Gang, LI Zhiming, ZHANG Fuqiang, CHEN Qiming, HAN Jinhua, YANG Xinyu   +6 more
doaj   +1 more source

A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Energies, 2021
Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity.
Hongyan Zhao, Jiangui Chen, Yan Li, Fei Lin   +3 more
doaj   +1 more source

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of Power Electronics, 2021
In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Phil Mellor   +5 more
doaj   +1 more source

SiC MOSFETs capacitance study

e-Prime - Advances in Electrical Engineering, Electronics and Energy, 2023
SiC MOSFTEs are widely used nowadays for a large number of power applications. Even though they are more performant than their Silicon counterpart, they suffer from some issues which are still unsolved. Among these, the high traps concentration existing at the SiC/SiO2 interface is one of the main concerns while evaluating the device performance.
Matacena I., Maresca L., Riccio M., Irace A., Breglio G., Daliento S.   +5 more
openaire   +3 more sources

High Frequency Multipurpose SiC MOSFET Driver

Advances in Electrical and Electronic Engineering, 2021
This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters.
Strossa, Jan, Damec, Vladislav, Sobek, Martin, Kouřil, Daniel, Bača, Jakub   +4 more
openaire   +3 more sources