Results 91 to 100 of about 1,030 (185)

A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q_gd and R_on. [PDF]

Micromachines (Basel)
Cui W, Guo J, Xu H, Zhang DW.
europepmc   +1 more source

Research on Single-Event Burnout Reinforcement Structure of SiC MOSFET. [PDF]

Micromachines (Basel)
Liao Q, Liu H.
europepmc   +1 more source

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. [PDF]

Materials (Basel)
Anoldo L, Zanetti E, Coco W, Russo A, Fiorenza P, Roccaforte F.   +5 more
europepmc   +1 more source

Study of 3C-SiC Power MOSFETs. [PDF]

Micromachines (Basel)
Fardi H.
europepmc   +1 more source

A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics. [PDF]

Sci Rep
Xu F, Dong Y, Li F, Xie F, Guo P, Zhou Y, Liu Y, Meng X, Cao R, Xue Y.   +9 more
europepmc   +1 more source

A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability. [PDF]

Materials (Basel)
Feng Z, Lai P, Hasan ASMK, Fatani F, Alaeddini A, Huang L, Chen Z, Li Q.   +7 more
europepmc   +1 more source

Review of Prognosis Approaches Applied to Power SiC MOSFETs for Health State and Remaining Useful Life Prediction. [PDF]

Entropy (Basel)
Kumar S, Allard B, Hologne-Carpentier M, Clerc G, Auger F.   +4 more
europepmc   +1 more source

A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]

Micromachines (Basel)
Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
europepmc   +1 more source

Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]

Sci Adv
Zhou H, Zhou M, Xiang M, Gong H, Gao G, Wang C, Zhang Y, Dang K, Liu Z, Zhang J, Zhang H, Wang Y, Wang H, Si M, Zhang Y, Hao Y, Zhang J.   +16 more
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source