Results 91 to 100 of about 13,076 (221)
High‐Performance Ultra‐Wide‐Bandgap CaSnO3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors
Advanced Electronic Materials, Volume 11, Issue 19, November 18, 2025.High‐performance enhancement‐mode MOSFET devices made from ultra‐wide bandgap semiconductor CaSnO3 are demonstrated for the first time with an on/off ratio exceeding 108, field‐effect mobility of 8.4 cm2 V−1 s−1, low contact resistance of 0.73 kΩ·µm, and a record breakdown field of ∼8.3 MV cm−1.
Weideng Sun +10 more
wiley +1 more source
Modular integrated SiC MOSFET matrix converter [PDF]
, 2017 This paper presents the assembly and characterization of an integrated all SiC 3-to-1 phases matrix converter, of typical application in domains requiring harsh environment withstand capability with high reliability and availability levels (e.g ...
Aliyu, Attahir Murtala +3 more
core +1 more source
Enhancing Electrical and Interfacial Properties of BeO/4H‐SiC Structures with SiO2 Interlayer
Advanced Electronic Materials, Volume 11, Issue 19, November 18, 2025.The integration of a SiO2 interlayer into the BeO/4H‐SiC stack effectively suppresses carbon‐induced interfacial defects during post‐deposition annealing. This achieves significantly lower interface trap densities and enhanced dielectric strength. Electrical measurements and band‐offset analysis confirm improved carrier confinement, demonstrating the ...
Sangoh Han +7 more
wiley +1 more source
Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET
IEEE Access, 2019 The traditional wireless power transfer circuit uses the full-bridge or half-bridge inverter, which has complex circuit and control and low reliability.
Houji Li +3 more
doaj +1 more source
Spin resonance of 2D electrons in a large-area silicon MOSFET
, 2007 We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface.
A.M. Tyryshkin +16 more
core +1 more source
Silicon carbide semiconductor technology for high temperature and radiation environments [PDF]
Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented.
Matus, Lawrence G.
core +1 more source
Global Energy Interconnection, 2019 High-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles.
Juanjuan Lu +5 more
doaj +1 more source
MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks [PDF]
, 2016 A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and ...
Finney, Stephen +3 more
core
Early fault detection in SiC-MOSFET with application in boost converter
Revista Facultad de Ingeniería Universidad de Antioquia, 2018 This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is
Leobardo Hernández-González +6 more
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Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET
Kongzhi Yu Xinxi Jishu, 2016 With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj