Design and implementation of a gate driver circuit for three-phase grid tied photovoltaic inverter application [PDF]
, 2018 This paper presents and describes the design and implementation of a new gate driver circuit for a three-phase grid tide photovoltaic inverter system using SIC- MOSFET at the power stage.
Al-Rubaye, Mohannad Jabbar Mnati +4 more
core
IEEE Open Journal of the Industrial Electronics SocietyThis article addresses the mitigation of dynamic voltage imbalance in series-connected 10 kV silicon carbide (SiC) JBS diodes within a three-level NPC (3L-NPC) converter using active turn-off delay control across complementary series-connected 10 kV SiC ...
Sanket Parashar +5 more
doaj +1 more source
Evaluation of Silicone Carbide Mosfet Driving Circuit Performance
CommunicationsThe performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
doaj +1 more source
Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses. [PDF]
Micromachines (Basel), 2023 Dong H, Wu Y, Li C, Xu H.
europepmc +1 more source
SiC MOSFETs for Offshore Wind Applications
Journal of Physics: Conference Series, 2018 Space and weight are critical factors for offshore wind applications during the construction, operation, and maintenance phases. Superior material properties of silicon carbide enable the development of power devices capable of switching fast as well as handling high power.
Tiwari, Subhadra +3 more
openaire +2 more sources
Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT
Kongzhi Yu Xinxi Jishu, 2016 The output characteristic test circuit, leakage current test circuit and double pulse test circuit were set up to study the effect of temperature characteristics of 1 200 V SiC MOSFET and 1 200 V Si IGBT on output characteristic, leakage current, switch ...
NING Puqi, LI Lei, WEN Xuhui, ZHANG Dong
doaj
A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance. [PDF]
Micromachines (Basel), 2023 Wu L +5 more
europepmc +1 more source
Investigation of Fault-Tolerant Capabilities in an Advanced Three-Level Active T-Type Converter [PDF]
, 2019 A novel fault-tolerant three-level power converter topology, named advanced three-level active T-Type (A3L-ATT) converter, is introduced to increase the reliability of multilevel power converters used in safety-critical applications.
He, Jiangbiao +2 more
core +1 more source
Examining the impacts of DM filters to PFC isolated Ćuk converter for DCM operation by comparing Si and SiC MOSFET. [PDF]
Sci Rep, 2023 Şehirli E.
europepmc +1 more source
Silicon carbide, a semiconductor for space power electronics [PDF]
After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device ...
Matus, Lawrence G., Powell, J. Anthony
core +1 more source