High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy. [PDF]
Nanomaterials (Basel), 2021 Fiorenza P +5 more
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An Advanced Three-Level Active Neutral-Point-Clamped Converter With Improved Fault-Tolerant Capabilities [PDF]
, 2017 A resilient fault-tolerant silicon carbide (SiC) three-level power converter topology is introduced based on the traditional active neutral-point-clamped converter.
He, Jiangbiao +2 more
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IEEE AccessSilicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj +1 more source
Research on the Techniques of High Power SiC-MOSFET Driver
机车电传动, 2018 In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain ...
ZHOU Shuai +4 more
doaj
Development of silicon carbide semiconductor devices for high temperature applications [PDF]
The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications.
Matus, Lawrence G. +2 more
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Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory
, 2009 The static switching properties and readout characteristics of proposed high-speed and nonvolatile nanoelectromechanical (NEM) memory devices are investigated By conducting a three-dimensional finite element mechanical simulation combined with an ...
Arai, T +6 more
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Power Electronic Devices and ComponentsThis paper study impact of gamma-ray irradiation on the characteristics of silicon carbide power metal oxide semiconductor field effect transistor (SiC MOSFET) from CREE, Inc., and its corresponding effects on the operation of 5/12 V DC-DC boost ...
S. M. Abd El-Azeem, W. Abd El-Basit
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Research on Switching Characteristics of 3 300 V Full SiC MOSFET Power Module
机车电传动, 2020 Depending on the advantages of SiC MOSFET with faster switching and lower on-state losses, the switching characteristics of a 3 300 V full SiC MOSFET device were studied to make better use of the device. Firstly, the switching processes of the SiC device
Kangkang SUN +5 more
doaj
Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module. [PDF]
Micromachines (Basel), 2020 Kim MK, Yoon SW.
europepmc +1 more source
Cryogenic Parametric Characterization of Gallium Nitride Switches [PDF]
This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect ...
Gonzalez, Marcelo C. +2 more
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