Space station common module network topology and hardware development [PDF]
Conceptual space station common module power management and distribution (SSM/PMAD) network layouts and detailed network evaluations were developed. Individual pieces of hardware to be developed for the SSM/PMAD test bed were identified.
Anderson, P. +9 more
core +1 more source
Space Radiation and Impact on Instrumentation Technologies [PDF]
Understanding the interactions of the Sun, Earth and other natural and man-made objects in the solar system with the space radiation environment is crucial for improving activities of humans on Earth and in space.
Wrbanek, John D., Wrbanek, Susan Y.
core +1 more source
Threshold voltage instability in SiC power MOSFETs
, 2019 Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two different types of electrical characterization: hysteresis and positive bias temperature instability (PBTI) measurements. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVT), which can be fully recovered by applying a ...
Giuseppe Consentino +5 more
openaire +3 more sources
Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]
Nanomaterials (Basel)Yu M, Shen Y, Ma H, Zhang Q.
europepmc +1 more source
Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET. [PDF]
Micromachines (Basel)Sheikhan A, Narayanan EMS.
europepmc +1 more source
SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network. [PDF]
Micromachines (Basel)Niu X +10 more
europepmc +1 more source
1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]
Micromachines (Basel)Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc +1 more source
A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>. [PDF]
Micromachines (Basel)Cui W, Guo J, Xu H, Zhang DW.
europepmc +1 more source
Research on Single-Event Burnout Reinforcement Structure of SiC MOSFET. [PDF]
Micromachines (Basel)Liao Q, Liu H.
europepmc +1 more source
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. [PDF]
Materials (Basel)Anoldo L +5 more
europepmc +1 more source