Results 121 to 130 of about 1,030 (185)

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. [PDF]

Micromachines (Basel)
Cao X, Liu J, An Y, Ren X, Yin Z.
europepmc   +1 more source

Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset. [PDF]

Sci Rep
Chankla M, Chen BR, Singh SK, Chauhan YS, Lee WJ, Chen NY, Kanjanachuchai S, Wu TL.   +7 more
europepmc   +1 more source

Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm². [PDF]

Micromachines (Basel)
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc   +1 more source

A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms. [PDF]

Micromachines (Basel)
Bernstein JB, Avraham T, Wang B.
europepmc   +1 more source

Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress. [PDF]

Micromachines (Basel)
Makhdoom S, Ren N, Wang C, Wu Y, Xu H, Wang J, Sheng K.   +6 more
europepmc   +1 more source

Extremely Low Thermal Resistance of β-Ga₂O₃ MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging. [PDF]

ACS Appl Mater Interfaces
Qu Z, Xie Y, Zhao T, Xu W, He Y, Xu Y, Sun H, You T, Han G, Hao Y, Ou X.   +10 more
europepmc   +1 more source

Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]

Micromachines (Basel)
Kang KM, Hu JW, Huang CF.
europepmc   +1 more source

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SiC MOSFETs

2020
Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature.
Maresca L., Borghese A., Romano G., Fayyaz A., Riccio M., Breglio G., Castellazzi A., Irace A.   +7 more
openaire   +2 more sources

SiC Integrated MOSFETs

physica status solidi (a), 1997
A new design and processing concepts have been applied to develop practical SiC trench MOSFETs for high power applications. The designed trench MOSFET has a MOS structure consisting of epitaxially grown n-type SiC trench sidewall layers. The current flows via an accumulation mode through the channel defined in the epitaxially grown SiC sidewall layer ...
S. Onda, R. Kumar, K. Hara
openaire   +1 more source