A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability. [PDF]
Feng Z +7 more
europepmc +1 more source
A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics. [PDF]
Xu F +9 more
europepmc +1 more source
A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]
Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
europepmc +1 more source
Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]
Zhou H +16 more
europepmc +1 more source
Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]
Zhang H +6 more
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EDS COMPOUND SEMICONDUCTOR DEVICESAND CIRCUITS TECHNICAL COMMITTEE [PDF]
Ghione, Giovanni
core
A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs. [PDF]
Qin H +5 more
europepmc +1 more source
Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC. [PDF]
Shen Y +16 more
europepmc +1 more source
High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET. [PDF]
Lodhi MEA +4 more
europepmc +1 more source

