Results 161 to 170 of about 13,076 (221)

Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress. [PDF]

Micromachines (Basel)
Makhdoom S, Ren N, Wang C, Wu Y, Xu H, Wang J, Sheng K.   +6 more
europepmc   +1 more source

Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]

Micromachines (Basel)
Kang KM, Hu JW, Huang CF.
europepmc   +1 more source

Extremely Low Thermal Resistance of β-Ga₂O₃ MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging. [PDF]

ACS Appl Mater Interfaces
Qu Z, Xie Y, Zhao T, Xu W, He Y, Xu Y, Sun H, You T, Han G, Hao Y, Ou X.   +10 more
europepmc   +1 more source

Single-Switch Inverter Modular Parallel Multi-Voltage Levels Wireless Charging System for Robots. [PDF]

Sensors (Basel)
Li H, Sun Z, Wei L.
europepmc   +1 more source

Pre-Silicon Accurate SPICE Modeling of Trench MOSFETs via Advanced TCAD Simulations and Dynamic Validation. [PDF]

Micromachines (Basel)
Tariq A, Minardi G, Cinnera Martino V, Fazio E, Rinaudo S, Privitera G, Neri F, Corsaro C.   +7 more
europepmc   +1 more source

The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap. [PDF]

Materials (Basel)
Kamiński M, Król K, Kwietniewski N, Myśliwiec M, Sochacki M, Stonio B, Kisiel R, Martychowiec A, Racka-Szmidt K, Werbowy A, Żelazko J, Niedzielski P, Szmidt J, Strójwąs A.   +13 more
europepmc   +1 more source

A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments. [PDF]

Sensors (Basel)
Zhang Q, Liu Y, Li H, Wang J, Wang Y, Cheng F, Han H, Zhang P.   +7 more
europepmc   +1 more source

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SiC MOSFETs

2020
Modern switching components for energy processing widely consist of active semiconductor devices in Si, a mature and well-established technology that is reaching its physical limits. The main limitations of Si concern the blocking voltage capability, the switching frequency, and the operating temperature.
Maresca L., Borghese A., Romano G., Fayyaz A., Riccio M., Breglio G., Castellazzi A., Irace A.   +7 more
openaire   +2 more sources

SiC Integrated MOSFETs

physica status solidi (a), 1997
A new design and processing concepts have been applied to develop practical SiC trench MOSFETs for high power applications. The designed trench MOSFET has a MOS structure consisting of epitaxially grown n-type SiC trench sidewall layers. The current flows via an accumulation mode through the channel defined in the epitaxially grown SiC sidewall layer ...
S. Onda, R. Kumar, K. Hara
openaire   +1 more source

SiC MOSFET Reliability Update

Materials Science Forum, 2012
Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das, Sarah K. Haney, Jim Richmond, Anthony Olmedo, Q. Jon Zhang, Zoltan Ring   +5 more
openaire   +1 more source