Results 171 to 180 of about 13,076 (221)
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IEEE Electron Device Letters, 1986
Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Robustness of 1.2kV SiC MOSFET devices
Microelectronics Reliability, 2013This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests.
Dhouha, Othman +5 more
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SiC Epi-Channel Lateral MOSFETs
Materials Science Forum, 2014SiC lateral MOSFETs with multi-layers epi-channels were studied in this work. The epi-channel with a high concentration n-type epilayer sandwiched by two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, improved from 1.53 cm2/V.s of devices without epi-channels.
Cheng Tyng Yen +9 more
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Materials Science Forum, 2016
This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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IEEE Electron Device Letters, 2001
A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance.
D. Alok +6 more
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A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance.
D. Alok +6 more
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SiC Power MOSFET modeling challenges
2012 Students Conference on Engineering and Systems, 2012SiC Power MOSFETs show a huge potential for high voltage, high temperature, high-power and high-frequency power electronic applications. Recently SiC MOSFETs were being made available in market. It is important to have spice models to validate the circuit using such high performance devices because it is not always possible to put the real hardware in ...
Rajendra Pratap +2 more
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Materials Science Forum, 2007
We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax=11.2 GHz for a device with 0.5 µm nominal channel length. Functional devices with 0.3 µm nominal channel length
G. Gudjónsson +7 more
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We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax=11.2 GHz for a device with 0.5 µm nominal channel length. Functional devices with 0.3 µm nominal channel length
G. Gudjónsson +7 more
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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018
Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility ...
A. O'Neill +5 more
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Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility ...
A. O'Neill +5 more
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Active Switching with SiC MOSFETs
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 2019The work in this paper presents a methodology to overcome the coupled nature of dv/dt and di/dt to gate drive resistance and stray commutation inductance for a SiC MOSFET. The SiC MOSFET exhibits almost ideal switching behavior, corresponding closely to the simplified device equations.
Patrick Palmer +2 more
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SiC MOSFET threshold-stability issues
Materials Science in Semiconductor Processing, 2018Abstract This work provides additional insight into the threshold-voltage instability effect generally observed, to varying degrees, in SiC MOSFETs, and discusses the need for an improved test method to unambiguously separate out good devices from bad ones.
Aivars J. Lelis +2 more
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