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Developments of SiC DioMOS (Diode Integrated SiC MOSFET)
MRS Proceedings, 2014ABSTRACTSiC power devices can handle large power and high frequency switching beyond the Si power devices. Typical full-SiC power modules are composed of both SiC-MOSFETs and SiC-SBDs to suppress the degradation of Ron of SiC-MOSFET during the bipolar reverse-current flow while there will be unfavorable consequences such as increased material cost ...
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Reliability of Commercially Available SiC Power Mosfets
ECS Meeting Abstracts, 2014With the introduction of SiC power MOSFETs into the commercial market place, it is critically important to determine the reliability of these devices. A number of potential issues need to be addressed, including the stability of the device threshold voltage, and the reliability of both the body diode and the gate oxide.
Aivars Lelis +3 more
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10-kV SiC MOSFET-Based Boost Converter
IEEE Transactions on Industry Applications, 2008W kV SiC MOSFETs are currently under development by a number of organizations in the United States with the aim to enable their applications in high voltage high frequency power conversion applications. The aim of this study is to demonstrate their high frequency high temperature operation capability in the application of a DC/DC boost converter.
Jun Wang +7 more
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High-power-density 4H-SiC RF MOSFETs
IEEE Electron Device Letters, 2006We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm ...
G. Gudjónsson +9 more
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2010
In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
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In the previous chapters, it was demonstrated that the maximum operating frequency of high voltage bipolar silicon power devices is limited by the power dissipation due to their slow switching transients. The rate of rise of the voltage and rate of fall of the current during the turn-off process in these devices is slowed down by the presence of the ...
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Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers
Materials Science Forum, 2016An advanced silicon carbide power MOSFET process was developed and implemented on a high-volume 150mm silicon production line. SiC power MOSFETs fabricated on this 150mm silicon production line were demonstrated with blocking voltage of 1700V with VGS=0V.
Kevin Matocha +2 more
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Digital smart driver for SiC MOSFETs
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), 2020This paper presents a new concept of an isolated smart gate driver platform for SiC (Silicon Carbide) MOSFETs. It describes the required hardware to implement advanced functions to improve converter performance switching behavior and reliability. It also includes GHz bandwidth voltage monitorization and low speed current and temperature monitorization.
Nerea Arandia +3 more
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Fabrication and evaluation of SiC inverter using SiC-MOSFET
2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A) and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 ...
A. Yamane +4 more
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Comparison of 3C-SiC and 4H-SiC Power MOSFETs
Materials Science Forum, 2018A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation.
Bart J. Van Zeghbroeck, Hamid Fardi
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Large area 4H-SiC power MOSFETs
Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2002This paper describes the design and fabrication of 4H-SiC, n-channel Power MOSFETs. For the first time, we have achieved 350 V, 10 A (V/sub F/=4.4 V) devices with an active area of 0.105 cm/sup 2/ (3.3 mm /spl times/3.3 mm). This represents a specific on-resistance of 43 m/spl Omega//spl middot/cm/sup 2/ for a cell pitch of 25 /spl mu/m (160,000 cells ...
A. Agarwal +5 more
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