Progress in SiC MOSFET Reliability
ECS Transactions, 2013 Bias-temperature stress experiments performed on two generations of SiC power MOSFETs from the same manufacturer show reductions in threshold voltage (VT) shift at elevated temperatures from first- to second-generation. The negative VT shift is reduced from a range of -1 V to -1.6 V to a range of -100 mV to -300 mV for temperatures from 125°C to 175°C.
David R. Hughart +5 more
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SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
IEEE Journal of the Electron Devices Society, 2020 In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCDMOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed ...
Xintian Zhou +7 more
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A High Efficiency and Low Cost ANPC Inverter Using Hybrid Si/SiC Switches
IEEE Open Journal of Industry Applications, 2021 This paper presents a performance investigation and design optimization of a high efficiency three-level Active Neutral Point Clamped (ANPC) inverter topology using hybrid Si/SiC switches.
Dereje Woldegiorgis +3 more
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Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode
IEEE Journal of the Electron Devices Society, 2021 A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation.
Ya Liang Zheng +4 more
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Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Crystals, 2023 Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices.
Maolin Zhang +5 more
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A Comprehensive loss analysis of SiC-based DAB DC-DC converter for electric vehicle application [PDF]
E3S Web of Conferences, 2023 This paper presents loss analysis of SiC MOSFET based bidirectional DAB (Dual Active Bridge) DC-DC converter for EV application. This converter benefits the efficiency of the EV vehicle by reducing power loss and voltage drop across the converter.
Kalandar Kasim Resma, Robert Femi
doaj +1 more source
A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm
IEEE Access, 2021 In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur.
Yaodong Zhu +4 more
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High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
IEEE Journal of the Electron Devices Society, 2021 SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties.
Yue Chen +3 more
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Recent Advances in Short Circuit Protection Methods for SiC MOSFET [PDF]
MATEC Web of Conferences, 2023 Due to its high efficiency, low switching losses, and high temperature stability, Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been widely used in various fields.
Gao Tiecheng
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Self-Adaption Dead-Time Setting for the SiC MOSFET Boost Circuit in the Synchronous Working Mode
IEEE Access, 2022 To improve the DC-bus voltage and the switching frequency of the boost circuit and reduce the volume of the passive filter element and the heatsink, the SiC MOSFET should be used as the main switching device.
Lei Zhang +5 more
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