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An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET
IEEE Access, 2020 Silicon Carbide (SiC) MOSFET has undergone a rapid development and commercialization in recent years due to its superior features. However, the mainstream commercial SiC MOFESTs are often fitted to packages that are previously designed for silicon-based ...
Weichi Zhang +5 more
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Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices
Power Electronic Devices and Components, 2022 Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT.
Lubin Han +4 more
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Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET
Frontiers in Energy Research, 2023 The SiC MOSFET has lower conduction loss and switching loss than the Si IGBT, which helps to improve the efficiency and power density of the converter, especially for those having strict requirements for volume and weight, for example, electrical ...
Shangzhou Zhang, Shangzhou Zhang
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Energy capability of SiC MOSFETs [PDF]
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016 The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event.
Christian Unger, Martin Pfost
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Energies, 2019 A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and ...
Jiangui Chen, Yan Li, Mei Liang
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Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
机车电传动, 2021 The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment.
Chao CHEN +3 more
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Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
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A review on research development of SiC trench gate MOSFET technology
机车电传动, 2023 The third-generation wide-bandgap semiconductor silicon carbide (SiC) MOSFET devices have rapidly become a research hotspot in the production and research sectors due to their advantages, such as high voltage resistance, high-temperature resistance and ...
LUO Haihui +3 more
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A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package
IEEE Open Journal of Power ElectronicsThe conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is ...
Ran Yao +7 more
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IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
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