A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm
IEEE Access, 2021 In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur.
Yaodong Zhu +4 more
doaj +1 more source
Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]
, 2019 The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M +6 more
core +1 more source
High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
IEEE Journal of the Electron Devices Society, 2021 SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties.
Yue Chen +3 more
doaj +1 more source
Recent Advances in Short Circuit Protection Methods for SiC MOSFET [PDF]
MATEC Web of Conferences, 2023 Due to its high efficiency, low switching losses, and high temperature stability, Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been widely used in various fields.
Gao Tiecheng
doaj +1 more source
Self-Adaption Dead-Time Setting for the SiC MOSFET Boost Circuit in the Synchronous Working Mode
IEEE Access, 2022 To improve the DC-bus voltage and the switching frequency of the boost circuit and reduce the volume of the passive filter element and the heatsink, the SiC MOSFET should be used as the main switching device.
Lei Zhang +5 more
doaj +1 more source
, 1983 A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on on-axis α-SiC substrates.
Andersson, Sven +5 more
core +3 more sources
An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET
IEEE Access, 2020 Silicon Carbide (SiC) MOSFET has undergone a rapid development and commercialization in recent years due to its superior features. However, the mainstream commercial SiC MOFESTs are often fitted to packages that are previously designed for silicon-based ...
Weichi Zhang +5 more
doaj +1 more source
Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices
Power Electronic Devices and Components, 2022 Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT.
Lubin Han +4 more
doaj +1 more source
Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime [PDF]
, 2018 It is becoming a great interest to employ SiC based power devices in dual active bridge (DAB) converter as an alternative to conventional Si-IGBT, due to its higher switching frequency potential, smaller switching losses as well as the capability to ...
Castellazzi, Alberto, Wang, Zhenyu
core +1 more source
Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors [PDF]
, 2018 Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MOSFET
Corfield, Martin +8 more
core +3 more sources