Results 31 to 40 of about 13,076 (221)
Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET
Frontiers in Energy Research, 2023 The SiC MOSFET has lower conduction loss and switching loss than the Si IGBT, which helps to improve the efficiency and power density of the converter, especially for those having strict requirements for volume and weight, for example, electrical ...
Shangzhou Zhang, Shangzhou Zhang
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Energy capability of SiC MOSFETs [PDF]
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016 The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event.
Christian Unger, Martin Pfost
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Energies, 2019 A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and ...
Jiangui Chen, Yan Li, Mei Liang
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Experimental and analytical performance evaluation of SiC power devices in the matrix converter [PDF]
, 2014 With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices.
Castellazzi, Alberto +2 more
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Analysis of power converters with devices of SiC for applications in electric traction systems [PDF]
, 2016 This article presents the analysis of two topologies of power converters. Voltage Source Inverter (VSI) and Current Source Inverter (CSI) proposals for traction system applications, these topologies are implemented with silicon carbide devices.
Fernández Palomeque, Efrén Esteban +3 more
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The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs [PDF]
, 2015 Silicon carbide Schottky barrier diodes (SiC-SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot, and damping are shown to depend on the ambient temperature and the metal-oxide-
Alatise, Olayiwola M. +4 more
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Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
机车电传动, 2021 The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment.
Chao CHEN +3 more
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Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
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A Fault-Tolerant T-Type Multilevel Inverter Topology With Increased Overload Capability and Soft-Switching Characteristics [PDF]
, 2017 he performance of a novel three-phase four-leg fault-tolerant T-type inverter topology is introduced in this paper. This inverter topology provides a fault-tolerant solution to any open-circuit and certain short-circuit switching faults in the power ...
Demerdash, Nabeel +4 more
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Application of SiC MOSFETs in Industrial Power Supplies [PDF]
, 2020 Záměr této diplomové práce je analýza, simulace, porovnání a diskuze aplikace tranzistorů MOSFET na bázi karbidu křemíku v průmyslových zdrojích. Pozornost je věnována řízení SiC MOSFETů standartními kontroléry.
David Kudelásek
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