Results 31 to 40 of about 1,030 (185)
IEEE Access, 2019 The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu +5 more
doaj +1 more source
Energies, 2020 The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency,
Yingzhe Wu +3 more
doaj +1 more source
Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design
IET Power Electronics, 2022 With the rapid development of wide‐band gap semiconductor chip and package technologies, the voltage class of commercial silicon carbide (SiC) device is gradually improved.
Rongjun Ding +4 more
doaj +1 more source
A Low‐Cost and Compact High‐Frequency Gallium Nitride Gradient Power Amplifier for Low‐Field MRI
Magnetic Resonance in Medicine, Volume 95, Issue 5, Page 2992-2999, May 2026.ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
N. Reid Bolding +7 more
wiley +1 more source
Cryogenic Characterization of Commercial SiC Power MOSFETs [PDF]
Materials Science Forum, 2015 The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the ...
Han Chen +10 more
openaire +2 more sources
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee +7 more
wiley +1 more source
Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET
机车电传动, 2020 SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other ...
Liang ZENG +5 more
doaj
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj +1 more source
Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux
Advanced Materials, Volume 38, Issue 5, 22 January 2026.This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang +7 more
wiley +1 more source
PLoS ONE, 2023 Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions.
Hassan Khalid +6 more
doaj +1 more source