Results 41 to 50 of about 13,076 (221)
A review on research development of SiC trench gate MOSFET technology
机车电传动, 2023 The third-generation wide-bandgap semiconductor silicon carbide (SiC) MOSFET devices have rapidly become a research hotspot in the production and research sectors due to their advantages, such as high voltage resistance, high-temperature resistance and ...
LUO Haihui +3 more
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A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package
IEEE Open Journal of Power ElectronicsThe conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is ...
Ran Yao +7 more
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IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
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IEEE Access, 2019 The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu +5 more
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Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters [PDF]
, 2015 Efficency, power quality and EMI are three crucial performance drivers in LVDC applications such as electrical supply, EV charging or DC aerospace. Recent developments in SiC MOSFETs and MMC for LVDC promise two significant improvements in LVDC inverter ...
Finney, S.J., Roscoe, N.M., Zhong, Y.
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Accurate Measurement of Dynamic on-State Resistances of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter [PDF]
, 2020 Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to reduce ...
Evans, Paul +4 more
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Energies, 2020 The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency,
Yingzhe Wu +3 more
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Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO$_2$ interface [PDF]
, 2017 SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of the devices ...
D. Peters +8 more
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Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design
IET Power Electronics, 2022 With the rapid development of wide‐band gap semiconductor chip and package technologies, the voltage class of commercial silicon carbide (SiC) device is gradually improved.
Rongjun Ding +4 more
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A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
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