Results 41 to 50 of about 1,030 (185)

Development of 3C-SiC MOSFETs

Journal of Telecommunications and Information Technology, 2007
The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size ...
Mietek Bakowski, Adolf Schöner, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe   +5 more
openaire   +2 more sources

An Active, Multimodal Neural Interface for Real‐Time Monitoring of Cortical Electrical, Thermal, and Optical Dynamics

Advanced Science, Volume 13, Issue 3, 14 January 2026.
A chronically implantable neural interface enables real‐time multimodal monitoring of electrical, thermal, and photodynamic activities. Incorporating silicon‐based transistor arrays with a functional multiplexing strategy and resistive sensors, the device delivers high‐fidelity recordings with long‐term stability and biocompatibility.
Jiahao Li, Yifei Lu, Zhongzheng Li, Lu Jin, Lianjie Zhou, Ke Ding, Junhan Liu, Bofan Hu, Pengchuan Liu, Dongqi An, Fuying Liang, Yuhang Hu, Yuting Shao, Yifan Ding, Lichao Ma, Rui Li, Yongfeng Mei, Rongjun Zhang, Enming Song   +18 more
wiley   +1 more source

Bulk Rutile‐GeO2 Single Crystals and Epi‐Ready Wafers

Crystal Research and Technology, Volume 61, Issue 1, January 2026.
Undoped and Sb‐doped bulk rutile‐GeO2 single crystals up to 18 mm in diameter are grown by the Top Seeded Solution Growth. Inclusion‐free and transparent crystals enable to preparation of epi‐ready wafers with different orientations and sizes up to 10 mm.
Zbigniew Galazka, Saud Bin Anooz, Steffen Ganschow, Albert Kwasniewski, Uta Juda, Manuela Imming‐Friedland, Thomas Wurche, Andreas Fiedler, Thomas Schroeder, Matthias Bickermann   +9 more
wiley   +1 more source

A Five‐Level Active Neutral‐Point‐Clamped Auxiliary Inverter Based on Reverse Blocking IGBT in Metro Applications

IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.
We propose a novel five‐level active‐neutral‐point‐clamped converter utilising reverse blocking IGBT (RB‐IGBT). The inverter configuration significantly reduces conduction losses, as only two switches are on the current paths in some switching states. We also propose an optimised state machine‐based modulation strategy.
Mingxia Xu, Bowen Yu, Yingying Xu, Rui Li, Jiatao Yang   +4 more
wiley   +1 more source

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

IEEE Access
This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies.
Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao   +7 more
doaj   +1 more source

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of the Industrial Electronics Society, 2022
In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact of ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor   +6 more
doaj   +1 more source

Approximate SPICE Modeling of SiC MOSFETs

IEEE Transactions on Power Electronics
The recent adaptation of wide bandgap (WBG) semiconductors pushes the SPICE circuit simulation software to the very edge, requiring computationally light and accurate assessment of rapid and oscillatory transients. One of the main limitations in SPICE modeling of WBG semiconductors is the lack of built-in models in the available software, forcing usage
Pawel Piotr Kubulus, Janus Dybdahl Meinert, Szymon Beczkowski, Asger Bjørn Jørgensen, Stig Munk-Nielsen, Dimosthenis Peftitsis   +5 more
openaire   +3 more sources

Natural Soft‐Switching Extended Phase‐Shift Control of Dual Active Bridge for High‐Efficiency Battery Charging and Discharging

IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.
This paper adopts a Neutral‐Point‐Clamped H‐bridge (NPC‐H) DAB topology to mitigate voltage stress on the input‐side switches. For both charging and discharging scenarios, a direct current control method is proposed using the output current as the primary control variable.
Yunxiang Jiang, Yihui Xia, Qingxin Guan, Jingru Zhang   +3 more
wiley   +1 more source

Research on High-power Full SiC Converter

机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai   +5 more
doaj  

Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter

IEEE Open Journal of Industry Applications, 2022
In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost.
Haichen Liu, Tiefu Zhao, Xuezhi Wu
doaj   +1 more source