Results 51 to 60 of about 13,076 (221)

Design of an Advanced Programmable Current-Source Gate Driver for Dynamic Control of SiC Device [PDF]

, 2019
Silicon carbide (SiC) power devices outperform Silicon-based devices in operational voltage levels, power densities, operational temperatures and switching frequencies.
Pickert, Volker, Wang, Xiang, Wu, Haimeng   +2 more
core   +1 more source

Cryogenic Characterization of Commercial SiC Power MOSFETs [PDF]

Materials Science Forum, 2015
The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the ...
Han Chen, Peter Michael Gammon, Vishal A. Shah, C.A. Fisher, Chun W. Chan, Saeed Jahdi, D.P. Hamilton, Michael R. Jennings, Maksym Myronov, David R. Leadley, Philip Andrew Mawby   +10 more
openaire   +2 more sources

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng   +7 more
wiley   +1 more source

Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET

机车电传动, 2020
SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other ...
Liang ZENG, Cuixia WANG, Jiangfeng WU, Youling YU, Chengzhan LI, Xing DU   +5 more
doaj  

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions [PDF]

, 2016
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when ...
Evans, Paul, Johnson, Christopher Mark, Li, Ke   +2 more
core  

Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]

, 2017
A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney, Van den Bossche, Alex   +1 more
core   +3 more sources

Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux

Advanced Materials, Volume 38, Issue 5, 22 January 2026.
This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang, Huajie Li, Yuhang Zhou, Jun Ma, Keng‐Te Lin, Han Lin, Chunsheng Guo, Baohua Jia   +7 more
wiley   +1 more source

Development of 3C-SiC MOSFETs

Journal of Telecommunications and Information Technology, 2007
The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size ...
Mietek Bakowski, Adolf Schöner, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe   +5 more
openaire   +2 more sources

An Active, Multimodal Neural Interface for Real‐Time Monitoring of Cortical Electrical, Thermal, and Optical Dynamics

Advanced Science, Volume 13, Issue 3, 14 January 2026.
A chronically implantable neural interface enables real‐time multimodal monitoring of electrical, thermal, and photodynamic activities. Incorporating silicon‐based transistor arrays with a functional multiplexing strategy and resistive sensors, the device delivers high‐fidelity recordings with long‐term stability and biocompatibility.
Jiahao Li, Yifei Lu, Zhongzheng Li, Lu Jin, Lianjie Zhou, Ke Ding, Junhan Liu, Bofan Hu, Pengchuan Liu, Dongqi An, Fuying Liang, Yuhang Hu, Yuting Shao, Yifan Ding, Lichao Ma, Rui Li, Yongfeng Mei, Rongjun Zhang, Enming Song   +18 more
wiley   +1 more source

Bulk Rutile‐GeO2 Single Crystals and Epi‐Ready Wafers

Crystal Research and Technology, Volume 61, Issue 1, January 2026.
Undoped and Sb‐doped bulk rutile‐GeO2 single crystals up to 18 mm in diameter are grown by the Top Seeded Solution Growth. Inclusion‐free and transparent crystals enable to preparation of epi‐ready wafers with different orientations and sizes up to 10 mm.
Zbigniew Galazka, Saud Bin Anooz, Steffen Ganschow, Albert Kwasniewski, Uta Juda, Manuela Imming‐Friedland, Thomas Wurche, Andreas Fiedler, Thomas Schroeder, Matthias Bickermann   +9 more
wiley   +1 more source