Results 51 to 60 of about 1,030 (185)

A non‐isolated symmetrical design of voltage lift switched‐inductor boost converter with higher gain and low voltage stress across switches

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
The article discusses the novel topology with high gain and low voltage stress DC‐DC converter based on switched‐capacitor and switched‐inductors for fuel cell and PV applications. The converter performance is analyzed and verified with the hardware prototype (22/400V, 50kHz).
Md Samiullah, Marif Daula Siddique, Atif Iqbal, Pandav Kiran Maroti, Subrata Banerjee   +4 more
wiley   +1 more source

An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike

Energy Reports, 2022
In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT.
Haihong Qin, Sixuan Xie, Qian Xun, Fanghua Zhang, Zhenxiang Xu, Lingyan Wang   +5 more
doaj   +1 more source

A Monolithic SiC MOSFET Behavioural Model with Full‐Temperature‐Range Capability: SPICE‐Compatible Structure and Experimental Verification

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This paper presents a novel behavioural model for SiC MOSFETs using a tanh(x)‐based current expression, which ensures smoothness, reduces core parameters to five, and effectively embeds temperature effects. A stepwise parameter extraction method prevents overfitting, enabling high‐fidelity simulation.
Shuoyu Ye, Jingyang Hu, Jianghua Zhuo, Haoze Luo, Chushan Li, Wuhua Li, Xiangning He   +6 more
wiley   +1 more source

AC-Stress Degradation in SiC MOSFETs

Materials Science Forum, 2023
This work presents very recent results regarding threshold-voltage (VT) degradation due to the application of an AC gate-bias stress (also known as a gate-switching stress). We show that this phenomenon includes both a seemingly-permanent VT shift and an increase in the observed VT hysteresis.
Aivars J. Lelis, Daniel B. Habersat
openaire   +1 more source

PWM Dead Times in Automotive Traction Inverters using IGBT, SiC MOSFET, or Si/SiC Fusion Switch Power Modules

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This article features a comprehensive methodology for analyzing and optimizing PWM dead time in automotive traction inverters, applicable to a wide range of power devices, including Si IGBT/Diodes, SiC MOSFETs, and Si/SiC Fusion switches. The proposed methodology enables a systematic comparison of dead time characteristics, focusing on part‐to‐part ...
Tomas Reiter, Julius Schapdick, Michael Krug, Mark Muenzer, Frank Wolter   +4 more
wiley   +1 more source

Diagonalisation of Coupled Parasitic Inductance Matrix and Equivalent Modelling for SiC Power Modules During Dynamic Current Sharing

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
Based on the principle of circuit equivalence, this paper proposes a decoupling calculation method for the coupled parasitic inductance matrix. This method transforms the self‐inductances and complex coupled mutual inductances in the traditional coupled parasitic inductance matrix into single equivalent parasitic inductances.
Xiaofeng Yang, Xuebao Li, Yongfan Zhan, Li Zhang, Rui Jin, Peng Sun, Xinling Tang, Zhibin Zhao   +7 more
wiley   +1 more source

Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment

Energies
In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu, Yunpeng Wei, Yuntao Wu, Zhou Wang, Xingyu Li, Xiangnan Wei   +5 more
doaj   +1 more source

An Optimised Independent Arm Modulation Strategy Driven by Energy Balance Mechanism for Circulating Current Suppression in Arm‐Multiplexing Modular Multilevel Converters

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
The arm‐multiplexing modular multilevel converter (AM‐MMC) is a lightweight, high‐power‐density topology whose conventional modulation strategies require large circulating currents to maintain energy balance. This paper establishes a time‐domain analytical model of the AM‐MMC energy‐balance mechanism and proposes an optimised independent arm modulation
Zhen Zhang, Yi Wang, Bao Liu, Tianbo Zhang, Shenkai Wang, Qing Liu   +5 more
wiley   +1 more source

Online Detection of SiC MOSFET Gate Oxide Degradation by Drain‐Source Voltage Surge in Inverter

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
The peak extraction circuit shown in Figure 7 converts the MOSFET's di/dt into a voltage, thereby characterising the health status of the MOSFET's gate oxide layer. ABSTRACT Gate oxide layer degradation has become one of the key issues in the reliability of SiC MOSFETs, which seriously restricts the broad application of SiC MOSFETs.
Tianyang Wang, Dafang Wang, Qi Li, Bao Liu, Jinhuang Zhao, Jiuxiao Wang   +5 more
wiley   +1 more source

Hardware Test and Validation of the Angular Droop Control: Analysis and Experiments

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This work presents the first hardware‐based implementation of angular droop control for grid‐forming converters. By linking active power to angle deviation, the control strategy enables exact frequency regulation and merges primary with secondary control.
Taouba Jouini, Jan Wachter, Sophie An, Veit Hagenmeyer   +3 more
wiley   +1 more source