Results 61 to 70 of about 13,076 (221)

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of the Industrial Electronics Society, 2022
In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact of ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor   +6 more
doaj   +1 more source

A Five‐Level Active Neutral‐Point‐Clamped Auxiliary Inverter Based on Reverse Blocking IGBT in Metro Applications

IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.
We propose a novel five‐level active‐neutral‐point‐clamped converter utilising reverse blocking IGBT (RB‐IGBT). The inverter configuration significantly reduces conduction losses, as only two switches are on the current paths in some switching states. We also propose an optimised state machine‐based modulation strategy.
Mingxia Xu, Bowen Yu, Yingying Xu, Rui Li, Jiatao Yang   +4 more
wiley   +1 more source

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

IEEE Access
This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies.
Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao   +7 more
doaj   +1 more source

Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter

IEEE Open Journal of Industry Applications, 2022
In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost.
Haichen Liu, Tiefu Zhao, Xuezhi Wu
doaj   +1 more source

Approximate SPICE Modeling of SiC MOSFETs

IEEE Transactions on Power Electronics
The recent adaptation of wide bandgap (WBG) semiconductors pushes the SPICE circuit simulation software to the very edge, requiring computationally light and accurate assessment of rapid and oscillatory transients. One of the main limitations in SPICE modeling of WBG semiconductors is the lack of built-in models in the available software, forcing usage
Pawel Piotr Kubulus, Janus Dybdahl Meinert, Szymon Beczkowski, Asger Bjørn Jørgensen, Stig Munk-Nielsen, Dimosthenis Peftitsis   +5 more
openaire   +3 more sources

A Monolithic SiC MOSFET Behavioural Model with Full‐Temperature‐Range Capability: SPICE‐Compatible Structure and Experimental Verification

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This paper presents a novel behavioural model for SiC MOSFETs using a tanh(x)‐based current expression, which ensures smoothness, reduces core parameters to five, and effectively embeds temperature effects. A stepwise parameter extraction method prevents overfitting, enabling high‐fidelity simulation.
Shuoyu Ye, Jingyang Hu, Jianghua Zhuo, Haoze Luo, Chushan Li, Wuhua Li, Xiangning He   +6 more
wiley   +1 more source

Research on High-power Full SiC Converter

机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai   +5 more
doaj  

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration.

PLoS ONE, 2023
Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions.
Hassan Khalid, Saad Mekhilef, Marif Daula Siddique, Addy Wahyudie, Mahrous Ahmed, Mehdi Seyedmahmoudian, Alex Stojcevski   +6 more
doaj   +1 more source

An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike

Energy Reports, 2022
In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT.
Haihong Qin, Sixuan Xie, Qian Xun, Fanghua Zhang, Zhenxiang Xu, Lingyan Wang   +5 more
doaj   +1 more source

PWM Dead Times in Automotive Traction Inverters using IGBT, SiC MOSFET, or Si/SiC Fusion Switch Power Modules

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This article features a comprehensive methodology for analyzing and optimizing PWM dead time in automotive traction inverters, applicable to a wide range of power devices, including Si IGBT/Diodes, SiC MOSFETs, and Si/SiC Fusion switches. The proposed methodology enables a systematic comparison of dead time characteristics, focusing on part‐to‐part ...
Tomas Reiter, Julius Schapdick, Michael Krug, Mark Muenzer, Frank Wolter   +4 more
wiley   +1 more source