Results 71 to 80 of about 13,076 (221)
Novel High Frequency Silicon Carbide Static Induction Transistor-Based Test-Bed for the Acquisition of SiC Power Device Reverse Recovery Characteristics [PDF]
, 2003 A test system is presented that utilizes a high-frequency Silicon Carbide (SiC) Static Induction Transistor (SIT) in place of the traditional MOSFET to test reverse recovery characteristics for the new class of SiC power diodes.
Lostetter, Alexander B. +4 more
core +1 more source
Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules [PDF]
, 2015 The temperature and dV/dt dependence of crosstalk has been analyzed for Si-IGBT and SiC-MOSFET power modules. Due to a smaller Miller capacitance resulting from a smaller die area, the SiC module exhibits smaller shoot-through currents compared with ...
Alatise, Olayiwola M. +5 more
core +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.Based on the principle of circuit equivalence, this paper proposes a decoupling calculation method for the coupled parasitic inductance matrix. This method transforms the self‐inductances and complex coupled mutual inductances in the traditional coupled parasitic inductance matrix into single equivalent parasitic inductances.
Xiaofeng Yang +7 more
wiley +1 more source
AC-Stress Degradation in SiC MOSFETs
Materials Science Forum, 2023 This work presents very recent results regarding threshold-voltage (VT) degradation due to the application of an AC gate-bias stress (also known as a gate-switching stress). We show that this phenomenon includes both a seemingly-permanent VT shift and an increase in the observed VT hysteresis.
Aivars J. Lelis, Daniel B. Habersat
openaire +1 more source
Analysis and Design Considerations of a Simplified LLC Three‐Port Resonant Converter
International Transactions on Electrical Energy Systems, Volume 2026, Issue 1, 2026.The growing demand for photovoltaic (PV) systems with integrated energy storage poses challenges for power conditioning, often requiring multiple converters that increase cost, complexity, and losses. Multiport resonant converters have emerged as an efficient alternative by integrating PV modules, energy storage systems (ESSs), and a DC bus within a ...
Leonardo Guerrero-Uribe +6 more
wiley +1 more source
Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applications [PDF]
, 2016 Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs.
Castellazzi, Alberto +4 more
core
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu +5 more
wiley +1 more source
EnergiesIn a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu +5 more
doaj +1 more source
Intrinsic origin of electron scattering at 4H-SiC(0001)/SiO$_2$ [PDF]
, 2016 We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO$_2$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though there are no ...
Iwase, Shigeru +2 more
core +2 more sources
Effects of Proton Radiation on Tin Oxide: Implications for Space Electronics
Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.Irradiating SnO2‐x FETs with 5 MeV protons at doses up to 1014 cm−2 enhances output current while maintaining a stable 106 on/off ratio. The SnO2‐x channel exhibits radiation‐induced conditioning and self‐stabilization, possibly due to local Sn4+ → Sn2+ reduction from proton collisions.
Huiseung Kim +7 more
wiley +1 more source