Results 71 to 80 of about 1,030 (185)

Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs

IEEE Open Journal of the Industrial Electronics Society
This article addresses the mitigation of dynamic voltage imbalance in series-connected 10 kV silicon carbide (SiC) JBS diodes within a three-level NPC (3L-NPC) converter using active turn-off delay control across complementary series-connected 10 kV SiC ...
Sanket Parashar, Nithin Kolli, Raj Kumar Kokkonda, Ajit Kanale, Subhashish Bhattacharya, Bantval Jayant Baliga   +5 more
doaj   +1 more source

Evaluation of Silicone Carbide Mosfet Driving Circuit Performance

Communications
The performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
doaj   +1 more source

Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses. [PDF]

Micromachines (Basel), 2023
Dong H, Wu Y, Li C, Xu H.
europepmc   +1 more source

SiC MOSFETs for Offshore Wind Applications

Journal of Physics: Conference Series, 2018
Space and weight are critical factors for offshore wind applications during the construction, operation, and maintenance phases. Superior material properties of silicon carbide enable the development of power devices capable of switching fast as well as handling high power.
Tiwari, Subhadra, Undeland, Tore Marvin, Midtgård, Ole-Morten, Nilsen, Roy   +3 more
openaire   +2 more sources

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance. [PDF]

Micromachines (Basel), 2023
Wu L, Zhang M, Liang J, Liu M, Zhang T, Yang G.   +5 more
europepmc   +1 more source

Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT

Kongzhi Yu Xinxi Jishu, 2016
The output characteristic test circuit, leakage current test circuit and double pulse test circuit were set up to study the effect of temperature characteristics of 1 200 V SiC MOSFET and 1 200 V Si IGBT on output characteristic, leakage current, switch ...
NING Puqi, LI Lei, WEN Xuhui, ZHANG Dong
doaj  

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. [PDF]

Micromachines (Basel), 2023
Qin H, Ba Z, Xie S, Zhang Z, Chen W, Xun Q.   +5 more
europepmc   +1 more source

Examining the impacts of DM filters to PFC isolated Ćuk converter for DCM operation by comparing Si and SiC MOSFET. [PDF]

Sci Rep, 2023
Şehirli E.
europepmc   +1 more source

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy. [PDF]

Nanomaterials (Basel), 2021
Fiorenza P, Alessandrino MS, Carbone B, Russo A, Roccaforte F, Giannazzo F.   +5 more
europepmc   +1 more source

Behavioral Modeling of SiC MOSFET Static and Dynamic Characteristics Based on Particle Swarm Optimization Algorithm

IEEE Access
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj   +1 more source