Results 81 to 90 of about 1,030 (185)

Research on the Techniques of High Power SiC-MOSFET Driver

机车电传动, 2018
In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain ...
ZHOU Shuai, ZHANG Xiaoyong, RAO Peinan, ZHANG Qing, SHI Hongliang   +4 more
doaj  

Thermal Management and Experimental Validation of a Copper-Inlay PCB for SiC MOSFETs in High-Power EV Fast Chargers

IEEE Open Journal of Power Electronics
Efficient thermal management is essential to ensure reliability and performance in high-power electric vehicle (EV) fast-charging converters employing silicon carbide (SiC) MOSFETs.
Muhammad Awais, Saghir Amin, Francisco P. Brito, Nuno Costa, Joao L. Afonso, Vitor Monteiro   +5 more
doaj   +1 more source

Impact of gamma-ray irradiation on commercial silicon carbide MOSFET with boost converter application

Power Electronic Devices and Components
This paper study impact of gamma-ray irradiation on the characteristics of silicon carbide power metal oxide semiconductor field effect transistor (SiC MOSFET) from CREE, Inc., and its corresponding effects on the operation of 5/12 V DC-DC boost ...
S. M. Abd El-Azeem, W. Abd El-Basit
doaj   +1 more source

Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module. [PDF]

Micromachines (Basel), 2020
Kim MK, Yoon SW.
europepmc   +1 more source

Research on Switching Characteristics of 3 300 V Full SiC MOSFET Power Module

机车电传动, 2020
Depending on the advantages of SiC MOSFET with faster switching and lower on-state losses, the switching characteristics of a 3 300 V full SiC MOSFET device were studied to make better use of the device. Firstly, the switching processes of the SiC device
Kangkang SUN, Yanping CHEN, Lanyuan XIN, Xiaonian WANG, Kaiqing YU, Changfeng HU   +5 more
doaj  

Threshold voltage instability in SiC power MOSFETs

, 2019
Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two different types of electrical characterization: hysteresis and positive bias temperature instability (PBTI) measurements. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVT), which can be fully recovered by applying a ...
Giuseppe Consentino, Esteban Guevara, Luis Sanchez, Felice Crupi, Susanna Reggiani, Gaudenzio Meneghesso   +5 more
openaire   +3 more sources

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]

Nanomaterials (Basel)
Yu M, Shen Y, Ma H, Zhang Q.
europepmc   +1 more source

Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET. [PDF]

Micromachines (Basel)
Sheikhan A, Narayanan EMS.
europepmc   +1 more source

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network. [PDF]

Micromachines (Basel)
Niu X, Sang L, Duan X, Gu S, Zhao P, Zhu T, Xu K, He Y, Li Z, Zhang J, Jin R.   +10 more
europepmc   +1 more source

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]

Micromachines (Basel)
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc   +1 more source