Results 231 to 240 of about 852,844 (264)

Microbeam studies of single-event effects

IEEE Transactions on Nuclear Science, 1996
The application of heavy-ion microbeam systems to the study of single-event effects is reviewed. Apertured microbeam systems have been used since the early 1980s to study charge collection. This has led to the development of the present models for the transport of charge following heavy-ion strikes in semiconductors. More recently, magnetically focused
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BRAM implementation of a single-event upset sensor for adaptive single-event effect mitigation in reconfigurable FPGAs

2017 NASA/ESA Conference on Adaptive Hardware and Systems (AHS), 2017
In this paper, we study the performance of a Block RAM (BRAM)-based embedded radiation sensor for adaptive single-event effect mitigation in FPGAs. To achieve this, we designed custom BRAM wrappers to extend the Xilinx BRAM macros with scrubbing and error correction, for both free and used BRAMs (utilized by the user). A case study demonstrates that in
Robért Glein, Philipp Mengs, Florian Rittner, Rainer Wansch, Albert Heuberger   +4 more
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Single-event effects rate prediction

IEEE Transactions on Nuclear Science, 1996
Common practices for predicting rates of single-event effects (SEE) in microelectronics in space environments are reviewed. Established rate-prediction models are discussed, and comparison is drawn between alternative approaches with discussion of dominant modeling parameters, assumptions, and limitations and the impact on prediction results.
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Rate prediction for single event effects-a critique

IEEE Transactions on Nuclear Science, 1992
The authors review various single event effects (SEE) testing and rate prediction methodologies and recommend standard approaches. This discussion is limited to single event upset (SEU) rate prediction for direct-ionization-induced effects. The standard approach being recommended is based partially on a different way of viewing the results of SEU cross-
E.L. Petersen, J.C. Pickel, J.H. Adams, E.C. Smith   +3 more
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SINGLE EVENT EFFECTS IN AVIONICS AND ON THE GROUND

International Journal of High Speed Electronics and Systems, 2004
Single event effects in electronics caused by the atmospheric neutrons have been an issue for systems using large blocks of random access memory (RAM) in avionics applications as well as those on the ground. At ground level there are two main sources of single event effects, alpha particles from the packaging materials as well as the neutrons, but at ...
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Single-Event Effects Test Methods

2019
This chapter presents an overview of main types of single-event effects (SEE), basic characteristics of sensitivity of devices and integrated circuits to SEE and existing standards and guidelines for testing with the use of heavy ion and proton accelerators. Basic requirements for both heavy ion and proton testing will be considered in detail including
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Single Event Effects: Mechanisms and Classification

2010
Single Event Effects (SEEs) induced by heavy ions, protons, and neutrons become an increasing limitation of the reliability of electronic components, circuits, and systems, and have stimulated abundant past and undergoing work for improving our understanding and developing mitigation techniques.
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Single-event effect ground test issues

IEEE Transactions on Nuclear Science, 1996
Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3 ...
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Physics-based simulation of single-event effects

IEEE Transactions on Device and Materials Reliability, 2005
This paper reviews techniques for physics-based device-level simulation of single-event effects (SEEs) in Si microelectronic devices and integrated circuits. Issues for device modeling of SEE are discussed in the context of providing physical insight into mechanisms contributing to SEE as well as providing predictive capabilities for calculation of SEE
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Destructive single-event effects in semiconductor devices and ICs

IEEE Transactions on Nuclear Science, 2003
F W Sexton
exaly