Results 231 to 240 of about 853,175 (263)

Single-event effects rate prediction

IEEE Transactions on Nuclear Science, 1996
Common practices for predicting rates of single-event effects (SEE) in microelectronics in space environments are reviewed. Established rate-prediction models are discussed, and comparison is drawn between alternative approaches with discussion of dominant modeling parameters, assumptions, and limitations and the impact on prediction results.
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Single-Event Effects Test Methods

2019
This chapter presents an overview of main types of single-event effects (SEE), basic characteristics of sensitivity of devices and integrated circuits to SEE and existing standards and guidelines for testing with the use of heavy ion and proton accelerators. Basic requirements for both heavy ion and proton testing will be considered in detail including
openaire   +1 more source

SINGLE EVENT EFFECTS IN AVIONICS AND ON THE GROUND

International Journal of High Speed Electronics and Systems, 2004
Single event effects in electronics caused by the atmospheric neutrons have been an issue for systems using large blocks of random access memory (RAM) in avionics applications as well as those on the ground. At ground level there are two main sources of single event effects, alpha particles from the packaging materials as well as the neutrons, but at ...
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Single Event Effects: Mechanisms and Classification

2010
Single Event Effects (SEEs) induced by heavy ions, protons, and neutrons become an increasing limitation of the reliability of electronic components, circuits, and systems, and have stimulated abundant past and undergoing work for improving our understanding and developing mitigation techniques.
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Single-event effect ground test issues

IEEE Transactions on Nuclear Science, 1996
Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3 ...
openaire   +1 more source

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

Micromachines, 2023
Zijun Cheng, Yiren Yu, Rongyao Ma
exaly  

Destructive single-event effects in semiconductor devices and ICs

IEEE Transactions on Nuclear Science, 2003
F W Sexton
exaly  

Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects

IEEE Transactions on Nuclear Science, 2013
Paul E Dodd, James R Schwank, Marty R Shaneyfelt   +2 more
exaly  

Single Event crosstalk shielding for CMOS logic

Microelectronics Journal, 2009
Selahattin Sayil
exaly  

Single event double-upset fully immune and transient pulse filterable latch design for nanoscale CMOS

Microelectronics Journal, 2017
Zhengfeng Huang, Ouyang Yiming, Yan Aibin   +2 more
exaly