Results 221 to 230 of about 852,844 (264)

Single-event effects on SSD controllers

2017 IEEE International Reliability Physics Symposium (IRPS), 2017
With designers employing FF hardening techniques to mitigate soft errors in complex ASICs, low-cost controller ICs have become one of the most vulnerable parts at the system-level. In this paper, SSD controllers are evaluated for neutron soft error performance to estimate their vulnerability.
B. L. Bhuva, S.-J. Wen, R. Wong, A. Garza   +3 more
openaire   +1 more source

Single-event effects in micromachined PMOSFETs

ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187), 2002
Single-event effects in micromachined PMOSFETs in a 2 /spl mu/m standard CMOS process are examined using device simulation. A comparison with the bulk and SOI PMOSFETs with comparable structures is also provided. The effects of N-well depth, angle of incidence, and N-well contact have been investigated in micromachined transistors.
A.A. Osman, M. Mojarradi, K. Mayaram
openaire   +1 more source

Single-event upset effects in optocouplers

IEEE Transactions on Nuclear Science, 1998
Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston, G.M. Swift, T. Miyahira, S. Guertin, L.D. Edmonds   +4 more
openaire   +1 more source

Single-event effects in avionics

IEEE Transactions on Nuclear Science, 1996
The occurrence of single-event upset (SEU) in aircraft electronics has evolved from a series of interesting anecdotal incidents to accepted fact. A study completed in 1992 demonstrated that SEUs are real, that the measured in-flight rates correlate with the atmospheric neutron flux, and that the rates can be calculated using laboratory SEU data.
openaire   +1 more source

SINGLE EVENT EFFECTS IN THE NANO ERA

International Journal of High Speed Electronics and Systems, 2008
Scaling of complementary metal oxide semiconductor (CMOS) technologies to the sub-100 nm dimension regime increase the sensitivity to pervasive terrestrial radiation. Diminishing levels of charge associated with information in electronic circuits, interactions of multiple transistors due to tight packing densities, and high circuit clock speeds make ...
M. L. ALLES, L. W. MASSENGILL, R. D. SCHRIMPF, R. A. WELLER, K. F. GALLOWAY   +4 more
openaire   +1 more source

Single Event Effects in MEMS Accelerometers

2009 IEEE Radiation Effects Data Workshop, 2009
We present single event effects, induced by heavy ions and protons, on a COTS MEMS accelerometer. The testing procedure is outlined and the contributions from different parts of the accelerometer are discussed.
Coumar Oudea, Patrick Poirot, Remi Gaillard, Christian Poivey, Laurent Marchand   +4 more
openaire   +1 more source

Laboratory tests for single-event effects

IEEE Transactions on Nuclear Science, 1996
Integrated circuits are currently tested at accelerators for their susceptibility to single-event effects (SEE's). However, because of the cost and limited accessibility associated with accelerator testing, there is considerable interest in developing alternate testing methods.
S. Buchner, D. McMorrow, J. Melinger, A.B. Camdbell   +3 more
openaire   +1 more source

Single-Event, Enhanced Single-Event and Dose-Rate Effects with Pulsed Proton Beams

IEEE Transactions on Nuclear Science, 1987
Pulsed proton beams can create various upset effects in memory circuits. The response of the IDT 6116RH static RAM to these effects has been investigated over a range of flux extending from a single-event dominated region to a dose-rate dominated region.
M. A. Xapsos, L. W. Massenqill, W. J. Stapor, P. Shapiro, A. B. Campbell, S. E. Kerns, K. W. Fernald, A. R. Knudson   +7 more
openaire   +1 more source

Single Event Effects in NAND Flash Memory Arrays

IEEE Transactions on Nuclear Science, 2005
We are showing for the first time the charge loss due to heavy ion irradiation on Flash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can be expected after the hit of a single ion on a single memory cell.
G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami   +4 more
openaire   +1 more source

Mitigation of Single Event Effects

2016
Mitigation of single event soft errors has taken on growing importance as transistor sizes have decreased. Commercial manufacturers will soon need to address single-event effects as terrestrial radiation sources become a significant source of soft errors in ground-based applications.
openaire   +1 more source