Results 1 to 10 of about 779,893 (262)

Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature [PDF]

Sensors, 2018
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola, Ahmad Al Youssef, Samuel Ducret, Franck Perrier, Raphael Buiron, Olivier Gilard, Julien Mekki, Mathieu Boutillier, Guillaume Hubert, Christian Poivrey   +9 more
doaj   +2 more sources

Prediction of Single-Event Effects in FDSOI Devices Based on Deep Learning [PDF]

Micromachines, 2023
Single-event effects (SEE) are an important index of radiation resistance for fully depleted silicon on insulator (FDSOI) devices. The research into traditional FDSOI devices is based on simulation software, which is time consuming, requires a large ...
Rong Zhao, Shulong Wang, Shougang Du, Jinbin Pan, Lan Ma, Shupeng Chen, Hongxia Liu, Yilei Chen   +7 more
doaj   +2 more sources

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions [PDF]

Micromachines
GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate ...
Xinxiang Zhang, Yanrong Cao, Chuan Chen, Linshan Wu, Zhiheng Wang, Shuo Su, Weiwei Zhang, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +2 more sources

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits [PDF]

Sensors, 2020
It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time ...
Md Arifur R. Sarker, Seungwoo Jung, Adrian Ildefonso, Ani Khachatrian, Stephen P. Buchner, Dale McMorrow, Pauline Paki, John D. Cressler, Ickhyun Song   +8 more
doaj   +2 more sources

Single event effects qualificatoin of integrated circuits

Безопасность информационных технологий, 2020
The goal of qualification or monitoring of electronic device radiation testings is to ensure that devices meet the set of requirements. In some cases, this can be achieved without full characterization of radiation behavior, which leads to significant ...
Armen V. Sogoyan, Anatoly A. Smolin, Alexander I. Chumakov   +2 more
doaj   +3 more sources

Single Event Effects Rate Calculation with Different Models

Безопасность информационных технологий, 2017
The paper presents SEE rate calculation using different models. It is shown the most conservative estimate for rate prediction is thin layer model. A new approach to set IC’s SEE requirements is suggested.
A I Chumakov, V M Uzhegov, A O Akhmetov, D V Boychenko, A V Yanenko, N V Ryasnoy   +5 more
doaj   +3 more sources

Accelerator simulation test technology and its application for single event effect evaluation in space

He jishu, 2023
BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming, GUO Gang, SUI Li, LIU Jiancheng, ZHANG Yanwen, ZHANG Fuqiang, YIN Qian, HAN Jinhua, ZHANG Zheng, SUN Haohan   +9 more
doaj   +1 more source

A system-level method for hardening phase-locked loop to single-event effects

Materials Research Express, 2022
To mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional and integral path is proposed.
Bin Liang, Xinyu Xu, Hengzhou Yuan, Jianjun Chen, Deng Luo, Yaqing Chi, Hanhan Sun   +6 more
doaj   +1 more source

Triple Modular Redundancy verification via heuristic netlist analysis [PDF]

PeerJ Computer Science, 2015
Triple Modular Redundancy (TMR) is a common technique to protect memory elements for digital processing systems subject to radiation effects (such as in space, high-altitude, or near nuclear sources). This paper presents an approach to verify the correct
Giovanni Beltrame
doaj   +2 more sources

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

Radiation, 2021
This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.)
Arijit Karmakar, Jialei Wang, Jeffrey Prinzie, Valentijn De Smedt, Paul Leroux   +4 more
doaj   +1 more source