Results 271 to 280 of about 11,947,015 (317)

Single-Event Transient Case Study for System-Level Radiation Effects Analysis

IEEE Transactions on Nuclear Science, 2021
Analog single-event transient (SET) results are analyzed for two different applications within one system architecture. Application-specific analyses are presented on the MAX4595 commercial device using single-event effects criticality and goal ...
Rebekah A Austin, Jonathan A Pellish, Hak Kim   +2 more
exaly   +2 more sources

Higher NMOS Single Event Transient Susceptibility Compared to PMOS in Sub-20nm Bulk FinFET

IEEE Electron Device Letters, 2023
The single event transient (SET) susceptibility in the sub-20nm bulk FinFET process is studied in this letter. It is firstly found that NMOS is more sensitive to SET compared with PMOS, which is opposite to the planar CMOS process.
Qian Sun, Yang Guo, Bin Liang, Ming Tao, Yaqing Chi, Peng-Cheng Huang, Zhen-Yu Wu, Deng Luo, Jianjun Chen   +8 more
semanticscholar   +1 more source

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology

IEEE International Reliability Physics Symposium, 2023
The effects of $\gamma$ radiation-induced positive trapped charges in the top buried oxide layer $\boldsymbol{(\mathrm{Q}_{\text{BOX}1})}$ on the single event transient (SET) response of Double Silicon-On-Insulator (DSOI) transistors are examined for the
Yuchong Wang, Siyuan Chen, Fan-Yu Liu, Bo Li, Jiang-Jiang Li, Yang Huang, Tie-Xin Zhang, Xu Zhang, Zheng-Sheng Han, T. Ye, J. Wan   +10 more
semanticscholar   +1 more source

Prediction of Generated Single Event Transient Pulse Width Using Artificial Intelligence Methods

2023 IEEE 33rd International Conference on Microelectronics (MIEL), 2023
In this work, the use of artificial intelligence (AI) algorithms for the prediction of generated Single Event Transient (SET) pulse width in standard combinational cells is analyzed.
M. Andjelkovic, J. Chen, R. Syed, M. Marjanovic, G. Ristić, M. Krstić   +5 more
semanticscholar   +1 more source

The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

IEEE Transactions on Nuclear Science, 2023
The impact of carbon doping on the single-event transient (SET) response of SiGe heterojunction bipolar transistors (HBTs) was evaluated using pulsed-laser charge generation via two-photon absorption (TPA).
A. Ildefonso, J. Hales, A. Khachatrian, Jeffrey W. Teng, G. Tzintzarov, Delgermaa Nergui, Brett L. Ringel, Uppili S. Raghunathan, V. Jain, J. Cressler, D. McMorrow   +10 more
semanticscholar   +1 more source

Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015
Abstract We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures.
Gaillardin, M., Raine, M., Paillet, P., Adell, P., Girard, S., Duhamel, O., Andrieu, F., Barraud, S., Faynot, O.   +8 more
openaire   +2 more sources

Single event transients of scan flip-flop and an SET-immune redundant delay filter (RDF)

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013
Heavy-ion tests on 65nm CMOS Flip-Flops with different topologies are conducted to investigate their susceptibility to single event upsets (SEUs) and single event transients (SETs). The test results show that SETs on scan-enable node (SE) may cause a large number of SEUs, and the conventional delay filter is vulnerable to SETs, which can reduce the ...
Xinyuan Zhao, Liang Wang, Suge Yue
openaire   +1 more source

Single-Event Transient Tolerant Optical Receiver Using Triple Modular Redundancy

International Symposium on Circuits and Systems, 2022
In this work, a single-event transient tolerant optical receiver using triple modular redundancy (TMR) is presented. The TMR method splits a conventional receiver into three identical receivers in parallel.
Sami Sattar, G. Cowan
semanticscholar   +1 more source

A New Analytical Model of SET Latching Probability for Circuits Experiencing Single- or Multiple-Cycle Single-Event Transients

Journal of Electronic Testing, 2014
As technology scales down, more single-event transients (SETs) are expected to occur in combinational circuits and thus contribute to the increase of soft error rate (SER). We propose a systematic analysis method to precisely model the SET latching probability.
Hoda Pahlevanzadeh, Qiaoyan Yu
openaire   +2 more sources

SET-PAR: Place and Route Tools for the Mitigation of Single Event Transients on Flash-Based FPGAs

2015
Flash-based Field Programmable Gate Arrays (Flash-based FPGAs) are becoming more and more interesting for safety critical applications due to their re-programmability features while being non-volatile. However, Single Event Transients (SETs) in combinational logic represent their primary source of critical errors since they can propagate and change ...
STERPONE, Luca, DU, BOYANG
openaire   +2 more sources