Results 301 to 310 of about 315,481 (343)

Single Event Upset Practice

1997
This chapter and Chapter 5 include a reprise of the discussion in the earlier chapters pertinent to these sections, and together with Chapter 5 present guidelines for use in practical applications. Besides understanding the basic tenets of the discipline of single event phenomena (SEP), it is felt important for the reader that they be transformed into ...
George C. Messenger, Milton S. Ash
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Anomalies due to single event upsets

28th Aerospace Sciences Meeting, 1990
The description of single event upsets (SEUs) in the spacecraft Anomalies Handbook is reviewed. The basic mechanism involved in SEUs is summarized and discussed in terms of circuit analysis. Calculation of SEU rate is analytically described and discussed. Departures from single step function dependence in the SEU rate is addressed.
P. Robinson, W. Lee, R. Aguero, S. Gabriel   +3 more
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Single Event Upsets correlated with environment

IEEE Transactions on Nuclear Science, 1994
Single Event Upset rates on satellites in different Earth orbits are correlated with solar protons and geomagnetic activity and also with the NASA AP8 proton model to extract information about satellite anomalies caused by the space environment. An extensive discussion of the SEU data base from the TOMS solid state recorder and an algorithm for ...
A.L. Vampola, M. Lauriente, D.C. Wilkinson, J. Allen, F. Albin   +4 more
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On single event upset error manifestation

1994
This paper addresses the problem of how faults in a radiation environment primarily manifest as errors in a complex device. Previous work in the area has focused on modelling the latching of transients. In this paper this modelling task is extended to the phenomenon of double soft errors. The first error manifestation of a single event upset (SEU) in a
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Single-event upset effects in optocouplers

IEEE Transactions on Nuclear Science, 1998
Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston, G.M. Swift, T. Miyahira, S. Guertin, L.D. Edmonds   +4 more
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Single-event upset in flash memories

IEEE Transactions on Nuclear Science, 1997
Single-event upset was investigated in high-density flash memories from two different manufacturers. Many types of functional abnormalities can be introduced in these devices by heavy-ions because of their complex internal architecture. Changes in the stored memory contents sometimes occurred, even when devices were irradiated in a read mode with the ...
H.R. Schwartz, D.K. Nichols, A.H. Johnston   +2 more
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A Single Event Upset Resilient Latch Design with Single Node Upset Immunity

Journal of Electronic Testing, 2019
In this paper, a latch design with single node immunity to single event upsets during the hold state is proposed. This structure is based on the original Quatro latch and have two more redundant storage nodes. Compared with the reference, this structure is able to recover if any of these nodes is struck by ion particles during the hold state and it ...
Xixi Dai, Haibin Wang, Jiamin Chu, Zhi Liu 0004, Li Cai, Kang Yan   +5 more
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Formal Methods for Modelling and Analysis of Single-Event Upsets

2015 IEEE International Conference on Information Reuse and Integration, 2015
When a high-energy particle such as a proton strikes a CPU, the impact may result in the corruption of a data register on the CPU. Such a single-event upset (SEU), in which a random bit is flipped in the content of a data register, can lead to critical errors in the execution of a program.
René Rydhof Hansen, Kim Guldstrand Larsen, Mads Chr. Olesen, Erik Ramsgaard Wognsen   +3 more
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Single Event Upsets and Hot Pixels in digital imagers

2015 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS), 2015
From extensive study of digital imager defects, we found that permanent “Hot Pixels” are the main long term digital camera defects, and are caused by high energy cosmic ray particles. Clearly, as in other microelectronic integrated circuits, most of the particles do not induce permanent damage but instead, inject a short term charge that may cause a ...
Glenn H. Chapman, Rahul Thomas, Rohan Thomas, Klinsmann J. Coelho Silva Meneses, Tommy Q. Yang, Israel Koren, Zahava Koren   +6 more
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A Built-in Single Event Upsets Detector for Sequential Cells

Journal of Electronic Testing, 2015
A built-in single event upsets (SEUs) detector is presented in this paper. This detector utilizes charge sharing to detect an SEU in a sequential cell, and the detection process is analyzed through Accuro simulations in a 65 nm technology. The normal operation of this detector would not induce obvious performance degradation of the target circuit ...
Yuanqing Li, Haibin Wang, Lixiang Li 0001, Li Chen 0001, Rui Liu 0011, Mo Chen 0008   +5 more
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