Results 51 to 60 of about 315,481 (343)
A Novel Low-Power and Soft Error Recovery 10T SRAM Cell
Micromachines, 2023 In SRAM cells, as the size of transistors and the distance between transistors decrease rapidly, the critical charge of the sensitive node decreases, making SRAM cells more susceptible to soft errors.
Changjun Liu, Hongxia Liu, Jianye Yang
doaj +1 more source
Evaluation of commercial ADC radiation tolerance for accelerator experiments [PDF]
, 2015 Electronic components used in high energy physics experiments are subjected to a radiation background composed of high energy hadrons, mesons and photons. These particles can induce permanent and transient effects that affect the normal device operation.
Chen, Hucheng +9 more
core +1 more source
Single Event Upsets in NMOS Microprocessors
IEEE Transactions on Nuclear Science, 1981 Three advanced 16-bit NMOS microprocessors have been observed to suffer single event upset at a rate varying between one upset for every 8 × 1010 to one for every 2 × 1012 n/cm2-upset for cyclotron-produced neutrons with an average energy of 14 MeV. These rates are expected to vary, probably upward, with different types of programs.
Guenzer, C. S. +2 more
openaire +1 more source
Germline TP53 Mutations Causing Diamond–Blackfan Anemia: A French Report
Pediatric Blood &Cancer, EarlyView.ABSTRACT Diamond–Blackfan anemia is a rare congenital erythroblastopenia typically caused by mutations in ribosomal protein genes. Recently, gain‐of‐function mutations in TP53 have been identified as a novel cause of Diamond–Blackfan anemia. We report two French patients who both harbored a heterozygous TP53 deletion (NM_000546.5: c.1077delA; p ...
Rafael Moisan +6 more
wiley +1 more source
A Radiation-Hardened Low-Power SRAM with Enhanced Write Capability for Space Applications
Applied SciencesWith continued scaling of CMOS technology, the critical charge required for state retention in SRAM cells has decreased, leading to increased vulnerability to radiation-induced soft errors such as single-event upsets (SEUs) and single-event multi-node ...
Sang-Jin Kim, Sung-Hun Jo
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Yuanzineng kexue jishu, 2022 Based on the test site at the Qinghai Tibet Plateau with an altitude of 4 300 m, atmospheric neutron single event effects of a 65 nm high speed large area static random access memory (SRAM) array were measured in real time.
ZHANG Zhangang;LEI Zhifeng;HUANG Yun;EN Yunfei;ZHANG Yi;TONG Teng;LI Xiaohui;SHI Qian;PENG Chao;HE Yujuan;XIAO Qingzhong;LI Jianke;LU Guoguang
doaj
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background PIK3CA‐related overgrowth spectrum (PROS) includes several rare overgrowth disorders resulting from somatic gain‐of‐function mutations in PIK3CA. Despite treatment advances, including the recent approval of alpelisib for PROS in the United States, literature detailing the patient experience with PROS is limited.
Vamsi Bollu +8 more
wiley +1 more source
Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell
IEEE AccessThe effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through technology
Minji Bang +8 more
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Pediatric Blood &Cancer, EarlyView.ABSTRACT End‐of‐life conversations with adolescents and young adults (AYAs) with cancer rarely occur without the guidance of healthcare professionals. As a part of the ‘Difficult Discussions’ study, focused on palliative care and advance care planning discussions with AYAs with cancer, we investigated the factors that healthcare professionals identify ...
Justine Lee +9 more
wiley +1 more source
He jishu, 2023 BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming +9 more
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