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Impact of Process Variability and Single Event Transient on FinFET Technology

2019 IFIP/IEEE 27th International Conference on Very Large Scale Integration (VLSI-SoC), 2019
The evolution of integrated circuits has made them more susceptible to the radiation effects, besides increasing the manufacturing process variability. Traditionally, complex gates are adopted to reduce area, delay and power consumption. However, they can introduce challenges related to a robustness that might be avoided with more regular and basic ...
Leonardo Heitich Brendler   +3 more
openaire   +1 more source

Single Event Upset and Single Event Transient Detection in FPGA-based Search and Rescue Systems

2022 11th Mediterranean Conference on Embedded Computing (MECO), 2022
Gehad I. Alkady   +7 more
openaire   +1 more source

Simulation of transients caused by single-event upsets in combinational logic

IEEE International Conference on Test, 2005., 2006
A comprehensive technique for simulation of transients caused by single-event upsets (SEUs) in combinational logic circuits is described. Based upon linear RC models of gates, the proposed technique integrates a closed-form model for computation of the SEU-induced transient at the site of a particle strike with propagation models for the transients ...
openaire   +1 more source

Circuit for mitigating single-event-transients

2023
CHANG JOSEPH SYLVESTER   +4 more
openaire   +2 more sources

Single-Event Transient Case Study for System-Level Radiation Effects Analysis

IEEE Transactions on Nuclear Science, 2021
Rebekah A Austin   +2 more
exaly  

Bulk Bias as an Analog Single-Event Transient Mitigation Technique with Negligible Penalty

Electronics (Switzerland), 2020
Yaqing Chi, Jing Tian, Jianjun Chen
exaly  

The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature

Electronics (Switzerland), 2023
Xiaoyu Pan, Liu Yinong, Guo Hongxia
exaly  

Analysis of location and LET dependence of single event transient in 14 nm SOI FinFET

Nuclear Instruments & Methods in Physics Research B, 2022
Baojun Liu
exaly  

The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

Symmetry, 2019
Pengcheng Huang   +2 more
exaly  

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