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The Effect of the Temporal Position of a Gap on Its Automatic Detection. [PDF]
Omidvar S +4 more
europepmc +1 more source
Single-Event Transient in FinFETs and Nanosheet FETs
A single-event transient (SET) due to alpha particle strike is studied in 11- and 6-nm-bulk FinFETs and 6-nm-bulk nanosheet FET using 3-D TCAD simulation. The nanosheet device shows superior immunity to alpha particles due to the strong gate controllability.
Jungsik Kim +2 more
exaly +4 more sources
Single Event Transient acquisition and mapping for space device Characterization
Abstract It is necessary for space applications to evaluate the sensitivity of electronic devices to radiations. It was demonstrated that radiations can cause different types of effects to the devices and possibly damage them [1][2]. The interest in the effect of Single Event Transient (SET) has recently risen because of the increased ...
Roberta Pilia +4 more
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Single event transients in combinatorial circuits
Proceedings of the 18th annual symposium on Integrated circuits and system design - SBCCI '05, 2005The single event upset (SEU) mechanism in MOS circuits is normally investigated by Spice-like circuit simulation. The problem is that electrical simulation is time consuming and must be performed for each different circuit topology, incident particle and track. This work presents an accurate and computer efficient analytical model for the evaluation of
Gilson I. Wirth +3 more
openaire +1 more source

