Impact of Process Variability and Single Event Transient on FinFET Technology
2019 IFIP/IEEE 27th International Conference on Very Large Scale Integration (VLSI-SoC), 2019The evolution of integrated circuits has made them more susceptible to the radiation effects, besides increasing the manufacturing process variability. Traditionally, complex gates are adopted to reduce area, delay and power consumption. However, they can introduce challenges related to a robustness that might be avoided with more regular and basic ...
Leonardo Heitich Brendler +3 more
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Single Event Upset and Single Event Transient Detection in FPGA-based Search and Rescue Systems
2022 11th Mediterranean Conference on Embedded Computing (MECO), 2022Gehad I. Alkady +7 more
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Simulation of transients caused by single-event upsets in combinational logic
IEEE International Conference on Test, 2005., 2006A comprehensive technique for simulation of transients caused by single-event upsets (SEUs) in combinational logic circuits is described. Based upon linear RC models of gates, the proposed technique integrates a closed-form model for computation of the SEU-induced transient at the site of a particle strike with propagation models for the transients ...
openaire +1 more source
Circuit for mitigating single-event-transients
2023CHANG JOSEPH SYLVESTER +4 more
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Single-Event Transient Case Study for System-Level Radiation Effects Analysis
IEEE Transactions on Nuclear Science, 2021Rebekah A Austin +2 more
exaly
Bulk Bias as an Analog Single-Event Transient Mitigation Technique with Negligible Penalty
Electronics (Switzerland), 2020Yaqing Chi, Jing Tian, Jianjun Chen
exaly
The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature
Electronics (Switzerland), 2023Xiaoyu Pan, Liu Yinong, Guo Hongxia
exaly
Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain
Symmetry, 2020Yaqing Chi, Aq Wu, Chi Yaqing
exaly
Analysis of location and LET dependence of single event transient in 14 nm SOI FinFET
Nuclear Instruments & Methods in Physics Research B, 2022Baojun Liu
exaly
The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET
Symmetry, 2019Pengcheng Huang +2 more
exaly

