Results 261 to 270 of about 214,395 (302)

Detection of Single Event Transients Based on Compressed Sensing

2017 IEEE Trustcom/BigDataSE/ICESS, 2017
Single event transients (SETs) have seriously deteriorated the reliability Integrated circuits (ICs), especially for those in mission- or security-critical applications. Detecting and locating SETs can be useful for fault analysis and future enhancement.
Cuiping Shao, Huiyun Li
openaire   +1 more source

Reliability Evaluation for Single Event Transients on Digital Circuits

IEEE Transactions on Reliability, 2012
The effect of single event transient (SET) on reliability has become a significant concern for digital circuits. This paper proposed an algorithm for evaluating the reliability for SET on digital circuits, based on signal probability, universal generating function technique, and generalized reliability block diagrams.
Baojun Liu, Li Cai
openaire   +1 more source

Generation and Propagation of Single Event Transients in CMOS Circuits

2006 IEEE Design and Diagnostics of Electronic Circuits and systems, 2006
The generation and the propagation of radiation induced single event transients (SET) in CMOS circuits are evaluated. An accurate and computer efficient analytical model for SET generation and propagation is proposed. The model allows the rapid determination of the sensitivity of any MOS circuit node to SET, without the need to run circuit level ...
Gilson I. Wirth, Michele G. Vieira, Egas Henes Neto, Fernanda Gusmão de Lima Kastensmidt   +3 more
openaire   +1 more source

Single-Event Transient Analysis in High Speed Circuits

2011 International Symposium on Electronic System Design, 2011
The effect of Single-Event Transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of a combinational part of a circuit may propagate as a transient pulse at the input of a flip-flop and consequently latches in the flip-flop, thus ...
Mohammad Hosseinabady, Pejman Lotfi-Kamran, Jimson Mathew, Saraju P. Mohanty, Dhiraj K. Pradhan   +4 more
openaire   +1 more source

Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch

Journal of Electronic Testing, 2015
The circuit-level simulation analysis of the single event transient response of an on-chip single event latchup protection switch (SPS cell), previously designed and developed in the IHP 250 nm CMOS process, is presented. The SPS cell provides the latchup protection for standard cells on the principle of power domain control.
Marko S. Andjelkovic, Vladimir Petrovic, Zoran Stamenkovic, Goran S. Ristic, Goran S. Jovanovic   +4 more
openaire   +1 more source

Simulation-Based Analysis of the Single Event Transient Response of a Single Event Latchup Protection Switch

2015 IEEE 18th International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2015
A single event latchup protection switch (SPS) has been developed in the IHP 250 nm bulk CMOS technology. The SPS has been designed as a standard library cell intended for implementation in the radiation-tolerant application specific integrated circuits (ASICs).
Marko S. Andjelkovic, Vladimir Petrovic, Zoran Stamenkovic, Goran S. Ristic, Goran S. Jovanovic   +4 more
openaire   +1 more source

Accurate and efficient analysis of single event transients in VLSI circuits

9th IEEE On-Line Testing Symposium, 2003. IOLTS 2003., 2003
Single event transients (SETs) on combinational gates are becoming an issue in deep sub-micron technologies, thus efficient and accurate techniques for assessing their impact are strongly required. This paper presents a new technique that embeds time-related information in the topology of the analyzed circuit, allowing evaluating the effects of SETs ...
VIOLANTE, MASSIMO, SONZA REORDA, Matteo
openaire   +3 more sources

Single-event transients in LC-tank VCO

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology, 2012
The responses of a LC-tank VCO to single-event transients (SET) are investigated. The phase noise at 1 MHz offset is −117 dBc/Hz at the carrier frequency of 1.56 GHz. The circuit-level simulation results indicate that ion strikes on critical transistors cause distortions in the oscillating output.
Yuanlin Gao, Jianing Lou, Jun Zhang, Lei Li, Feng Xu   +4 more
openaire   +1 more source

Single-Event Transient Response of InGaAs MOSFETs

IEEE Transactions on Nuclear Science, 2014
The single-event-transient response of InGaAs MOSFETs exposed to heavy-ion and laser irradiations is investigated. The large barrier between the gate oxide and semiconductor regions effectively suppresses the gate transients compared with other types of III-V FETs.
Kai Ni, En Xia Zhang, Nicholas C. Hooten, William G. Bennett, Michael W. McCurdy, Andrew L. Sternberg, Ronald D. Schrimpf, Robert A. Reed, Daniel M. Fleetwood, Michael L. Alles, Tae-Woo Kim, Jianqiang Lin, Jesus A. del Alamo   +12 more
openaire   +1 more source

Single-event transients in high-speed comparators

IEEE Transactions on Nuclear Science, 2002
Single-event transients are investigated in comparators with switching speed below 80 ns, including one BiCMOS device. Modeling results show that the collapse of internal junctions after an ion strike delays the onset of collector current because of transient currents in the substrate that are not shielded by the buried layer.
A.H. Johnston, T.F. Miyahira, L.D. Edmonds, F. Irom   +3 more
openaire   +1 more source