Results 151 to 160 of about 312,838 (207)
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Single event upset at gigahertz frequencies
IEEE Transactions on Nuclear Science, 1994Single Event Upset (SEU) characteristics of a digital emitter coupled logic (ECL) device clocking at 0.5, 1, and 3.2 GHz and at temperatures of 5, 75, and 105/spl deg/ C are presented. The test technique is explained. Observations of two types of upsets, phase upsets at low Linear Energy Transfer (LETs) and amplitude upsets at high LETs are also ...
M. Shoga +5 more
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A Single Event Upset Resilient Latch Design with Single Node Upset Immunity
Journal of Electronic Testing, 2019In this paper, a latch design with single node immunity to single event upsets during the hold state is proposed. This structure is based on the original Quatro latch and have two more redundant storage nodes. Compared with the reference, this structure is able to recover if any of these nodes is struck by ion particles during the hold state and it ...
Xixi Dai +5 more
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Mechanisms Leading to Single Event Upset
IEEE Transactions on Nuclear Science, 1986SRAM cell recovery time following a 140 MeV Krypton strike on a Sandia SRAM is modelled using a two-dimensional transient numerical simulator and circuit code. Strikes at both n- and p-channel "off" drains are investigated. Four principle results are obtained.
C. L. Axness +4 more
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Single event upset rates in space
IEEE Transactions on Nuclear Science, 1992SEUs (single event upsets) in the CRRES (Combined Release and Radiation Effects Satellite) MEP (Microelectronic Package Space Experiment) showed a dramatic increase during a solar flare, the influence of the flare varied widely among device types, and a GaAs RAM (random access memory) showed a different response to the proton belts than some 51 RAMs ...
A. Campbell, P. McDonald, K. Ray
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Single event upset mitigation for FDP2008
2011 9th IEEE International Conference on ASIC, 2011Highly integrated contemporary SRAM-based Field Programmable Gate Arrays (FPGAs) lead to high occurrence-rate of transient faults induced by Single Event Upsets (SEUs) in FPGAs' configuration memory. In this paper, Fudan Design Environment (FDE) Triple Module Redundancy (TMR) approach for design triplication has been devised to meet high-reliability ...
null Meng Yang, null Gengsheng Chen
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Single Event Upsets in NMOS Microprocessors
IEEE Transactions on Nuclear Science, 1981Three advanced 16-bit NMOS microprocessors have been observed to suffer single event upset at a rate varying between one upset for every 8 × 1010 to one for every 2 × 1012 n/cm2-upset for cyclotron-produced neutrons with an average energy of 14 MeV. These rates are expected to vary, probably upward, with different types of programs.
C. S. Guenzer +2 more
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1988
Abstract : This report presents the results of an experimental program to characterize single event upset phenomena in selected bipolar memory devices irradiated with relativistic heavy ions. The principle objective was to determine the multibit upset rate at normal and parallel beam incidence angles.
Paul R. Measel +3 more
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Abstract : This report presents the results of an experimental program to characterize single event upset phenomena in selected bipolar memory devices irradiated with relativistic heavy ions. The principle objective was to determine the multibit upset rate at normal and parallel beam incidence angles.
Paul R. Measel +3 more
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Single Event Upset: Experimental
1997The discussion in this chapter centers around the major single event upset (SEU) simulation sources. Their importance lies in the fact that simulation methods are one of the few means by which microcircuit susceptibility to SEU can be measured. These sources and source types are few in number, principally because of the somewhat unusual properties of ...
George C. Messenger, Milton S. Ash
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Anomalies due to single event upsets
28th Aerospace Sciences Meeting, 1990The description of single event upsets (SEUs) in the spacecraft Anomalies Handbook is reviewed. The basic mechanism involved in SEUs is summarized and discussed in terms of circuit analysis. Calculation of SEU rate is analytically described and discussed. Departures from single step function dependence in the SEU rate is addressed.
P. Robinson +3 more
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1997
This chapter and Chapter 5 include a reprise of the discussion in the earlier chapters pertinent to these sections, and together with Chapter 5 present guidelines for use in practical applications. Besides understanding the basic tenets of the discipline of single event phenomena (SEP), it is felt important for the reader that they be transformed into ...
George C. Messenger, Milton S. Ash
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This chapter and Chapter 5 include a reprise of the discussion in the earlier chapters pertinent to these sections, and together with Chapter 5 present guidelines for use in practical applications. Besides understanding the basic tenets of the discipline of single event phenomena (SEP), it is felt important for the reader that they be transformed into ...
George C. Messenger, Milton S. Ash
openaire +1 more source