Results 161 to 170 of about 312,838 (207)

Laser Simulation of Single Event Upsets

IEEE Transactions on Nuclear Science, 1987
A pulsed picosecond laser was used to produce upsets in both a commercial bipolar logic circuit and a specially designed CMOS SRAM test structure. Comparing the laser energy necessary for producing upsets in transistors that have different upset sensitivities with the single event upset (SEU) level predicted from circuit analysis showed that a ...
S. P. Buchner, D. Wilson, K. Kang, D. Gill, J. A. Mazer, W. D. Raburn, A. B. Campbell, A. R. Knudson   +7 more
openaire   +1 more source

Non-random single event upset trends

IEEE Transactions on Nuclear Science, 1989
A macroscopic investigation of single-even-upset (SEU) trends for a class of CMOS/NMOS static RAMs exposed to heavy ions and protons has been performed. Analysis of the logical and spatial distribution of upsets as well as individual bit-upset polarity shows the need to consider the effects of peripheral circuitry interactions in understanding and ...
P.T. McDonald, W.J. Stapor, A.B. Campbell, L.W. Massengill   +3 more
openaire   +1 more source

Single-event upset effects in optocouplers

IEEE Transactions on Nuclear Science, 1998
Single-event upset is investigated for optocouplers using heavy ions. The threshold LET for optocouplers with internal high-gain amplifiers is very low, causing output transients to occur even when the optocouplers are irradiated with short-range alpha particles.
A.H. Johnston, G.M. Swift, T. Miyahira, S. Guertin, L.D. Edmonds   +4 more
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Single Event Upset Error Rates

1997
This chapter together with Chapter 8 provides the major share of the discussion on the practical aspects of single event upset (SEU). This includes formulas for computing SEU in various particle environments. Section 5.2 discusses SEU calculations for heavy-ion cosmic rays at geosynchronous altitudes and Section 5.3 for Van Allen belt protons.
George C. Messenger, Milton S. Ash
openaire   +1 more source

Single Event Upsets correlated with environment

IEEE Transactions on Nuclear Science, 1994
Single Event Upset rates on satellites in different Earth orbits are correlated with solar protons and geomagnetic activity and also with the NASA AP8 proton model to extract information about satellite anomalies caused by the space environment. An extensive discussion of the SEU data base from the TOMS solid state recorder and an algorithm for ...
A.L. Vampola, M. Lauriente, D.C. Wilkinson, J. Allen, F. Albin   +4 more
openaire   +1 more source

Single-event upset in flash memories

IEEE Transactions on Nuclear Science, 1997
Single-event upset was investigated in high-density flash memories from two different manufacturers. Many types of functional abnormalities can be introduced in these devices by heavy-ions because of their complex internal architecture. Changes in the stored memory contents sometimes occurred, even when devices were irradiated in a read mode with the ...
H.R. Schwartz, D.K. Nichols, A.H. Johnston   +2 more
openaire   +1 more source

Single-Event-Upset (SEU) Awareness in FPGA Routing

2007 44th ACM/IEEE Design Automation Conference, 2007
The majority of configuration bits affecting a design are devoted to FPGA routing configuration. We present a SEU-aware routing algorithm that provides significant reduction in bridging faults caused by SEUs. Depending on the routing architecture switches, for MCNC benchmarks, the number of care bits can be reduced between 13% and 19% on average with ...
S. Golshan, E. Bozorgzadeh
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Geometric Considerations in Single Event Upset Estimation

IEEE Transactions on Nuclear Science, 1985
We investigate the importance of several orientation dependent factors in estimating single event upsets due to cosmic rays. These factors include Earth's shadow, shielding and geomagnetic cutoff anisotropy, and angular dependence of device sensitivity.
John R. Letaw, Rein Silberberg, C. H. Tsao, James H. Adams   +3 more
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A single event upset tolerant latch design

Microelectronics Reliability, 2018
Abstract This paper presents a single-event-upset tolerant latch design based on a redundant structure featuring four storage nodes (i.e. Quatro). The reference structure manifests single node upset issues when either of the two internal nodes is hit and observes a positive transient afterwards.
Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang Baeg   +11 more
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Single-event upset in the PowerPC750 microprocessor

IEEE Transactions on Nuclear Science, 2001
Proton and heavy ion upset susceptibility has been measured individually for six types of storage elements in an advanced commercial processor, the PowerPC750, from two manufacturers: Motorola and IBM. Data on interfering program malfunctions was also collected. Compared to earlier PPC603e results, the upset susceptibility has decreased somewhat.
G.M. Swift, F.F. Fannanesh, S.M. Guertin, F. Irom, D.G. Millward   +4 more
openaire   +1 more source