Results 51 to 60 of about 13,512 (161)

Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation

AIP Advances
In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng, Mengtong Qiu, Peng Xu, Lili Ding, Yinhong Luo, Zhibin Yao, Fengqi Zhang, Shilong Gou, Zujun Wang, Yuanyuan Xue   +9 more
doaj   +1 more source

Predication of Heavy Ion Single Event Upset Threshold and Cross Section Based on Low Energy Proton Test Data in Nanometer Devices

Yuanzineng kexue jishu
In order to ensure the reliability of heavy ion single event effect experimental data and the accuracy of space on-orbit single event error rate prediction, the research was conducted on the method of predicting the equivalent silicon layer thickness ...
LUO Yinhong, ZHANG Fengqi, WANG Tan, DING Lili, JIANG Xinshuai
doaj   +1 more source

28nm Fault-Tolerant Hardening-by-Design Frequency Divider for Reducing Soft Errors in Clock and Data Recovery

IEEE Access, 2019
A fault-tolerant hardening-by-design frequency divider has been proposed for clock and data recovery in a 28-nm CMOS process. By means of the mandatory updating mechanism, the proposed divider can update the state of the D flip-flops from an error state ...
Hengzhou Yuan, Yang Guo, Jianjun Chen, Yaqing Chi, Xi Chen, Bin Liang   +5 more
doaj   +1 more source

Design and Comparison of SEU Tolerant 10T Memory Cell for Radiation Environment Applications

EAI Endorsed Transactions on Energy Web
Single event upsets (SEUs), which are caused by radiation particles, have emerged as a significant concern in aircraft applications. Soft mistakes, which manifest as corruption of data in memory chips and circuit faults, are mostly produced by SEUs. The
P Mangayarkarasi, Arunkumar K, Anitha Juliette Albert   +2 more
doaj   +1 more source

Reliability of LEON3 Processor’s Program Counter Against SEU, MBU, and SET Fault Injection

Cryptography
This paper presents a comprehensive register transfer-level (RTL) fault injection study targeting the program counter (PC) of the LEON3 processor, a SPARC V8-compliant core widely used in safety-critical and radiation-prone embedded applications.
Afef Kchaou, Sehmi Saad, Hatem Garrab, Mohsen Machhout   +3 more
doaj   +1 more source

Synergistic Effect of TID and SEE in 130 nm 7T SOI SRAM

Yuanzineng kexue jishu
The space environment is a very harsh operating environment, and space radiation can directly affect the operation of electronic devices causing total ionizing dose (TID), single event effect (SEE) and displacement damage (DD).
XIAO Shuyan1, GUO Gang1, WANG Linfei2, ZHANG Zheng1, CHEN Qiming1, GAO Linchun2, WANG Chunlin2, ZHANG Fuqiang1, ZHAO Shuyong1, LIU Jiancheng1
doaj   +1 more source

Atmospheric neutron inducing single event effects on AI chips manufacturing with 8 nm FinFET

Nuclear Engineering and Technology
--With the rapid advancement of artificial intelligence (AI) chips in diverse applications, single event effects (SEE) caused by high energy particles in ambient environment have emerged as a critical concern.
Yonghong Li, Jianan Tong, Weitao Yang, Zhiliang Hu, Lihua Mo, Tianjiao Liang, Chaohui He, Jinghui Lan   +7 more
doaj   +1 more source

A multi-node-upset-resilient 14T SRAM with high read stability for space applications

Nuclear Engineering and Technology
This paper proposes a voltage-booster read-decoupled radiation-hardened 14T (BDRH14T) SRAM cell. In harsh environments such as space, radiation can flip the stored data in memory cells, resulting in soft errors, including single-event upset (SEU) and ...
Sung-Jun Lim, Sung-Hun Jo
doaj   +1 more source

Comprehensive analysis of alternative splicing and transcriptome diversity in apple using long-read sequencing. [PDF]

Front Plant Sci
Hu C, Huang X, Luo S, Zhang H, Chen W, Niu Y, Xu C, Zhang X, Zhao Y, Wu R, Zhao J.   +10 more
europepmc   +1 more source