Results 101 to 110 of about 8,001,430 (204)

An Examination of Environment Perturbation Effects on Single Event Upset Rates [PDF]

, 1997
This paper presents an analysis of the sensitivity of single event upset (SEU) rate predictions to changes in the direct ionization-inducing environment.
Leidecker, Henning W., Lewis, Mark J., Gates, Michele M.   +2 more
core  

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Applied Sciences
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang, Peifang Dai, Ning Li, Yanbo Chen   +3 more
doaj   +1 more source

Frequency Dependence of Single-Event Upset in Highly Advanced PowerPC Microprocessors

, 2006
Single-event upset effects from heavy ions were measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes at three frequencies of 500, 1066 and 1600 MHz. Frequency dependence of single-event upsets is discussed. The results
White, Mark, Kouba, Coy K., Irom, Farokh, Farmanesh, Farhad   +3 more
core  

Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

, 2018
International audienceThe sensitivity of memory devices under proton irradiation has been extensively studied over the years. Two main mechanisms have been identified to drive the single-event upset (SEU) sensitivity in the last generation of devices ...
Bezerra, F., Artola, L., Caron, P., Ecoffet, R., Inguimbert, C., Inguimbert, Christophe, Caron, Pablo, Bezerra, Françoise, Ecoffet, Robert, Artola, Laurent   +9 more
core   +1 more source

Radiation-Hardened 20T SRAM with Read and Write Optimization for Space Applications

Applied Sciences
With continued CMOS scaling, transistor miniaturization has significantly raised SRAM integration density while lowering the critical charge (Qc), increasing cell vulnerability to spaceborne high-energy particles.
Kon-Woo Kim, Eun Gyo Jeong, Sung-Hun Jo
doaj   +1 more source

A ReRAM-Based Non-Volatile and Radiation-Hardened Latch Design. [PDF]

Micromachines (Basel), 2022
Yan A, Wei S, Chen Y, Fan Z, Huang Z, Cui J, Girard P, Wen X.   +7 more
europepmc   +1 more source

Técnicas de inyección de fallos basadas en FPGAs para la evaluación de la tolerancia a fallos de tipo SEU en circuitos digitales [PDF]

, 2007
Este trabajo de tesis doctoral presenta nuevas técnicas de inyección de fallos transitorios en elementos de memoria, que permiten la evaluación del comportamiento de los complejos circuitos digitales actuales en presencia de fallos SEU (Single Event ...
Portela García, Marta
core  

Efficient Protection of FPGA Implemented LDPC Decoders Against Single Event Upsets (SEUs) on Configuration Memories

IEEE Transactions on Circuits and Systems I: Regular Papers, 2023
Zhen Gao 0005, Yinghao Cheng, Qiang Liu 0011, Anees Ullah, Pedro Reviriego   +4 more
openaire   +2 more sources

Single event upset correction in Virtex-2 FPGAs by scrubbing and TMR [PDF]

, 2005
Without the protection of atmosphere, space systems are bombarded with radiation. Single Event Upset (SEU) is an effect of radiation and can change the state of a flip-flop.
Bhat, Swadha
core  

Single event upset (SEU) detection and correcting system using partial reconfiguration and scrubbing for military and space applications

, 2006
The Field Programmable Gate Arrays (FPGAs) devices are new technology for military and aerospace applications. Re-programmability feature of these devices allow the user to change the internal configured logic based on new system requirements.
Safarian, Carlo
core