Results 101 to 110 of about 962 (213)

Measurement of Single Event Upset rates in single pixels of ATLAS IBL [PDF]

, 2018
Techniques have been developed to determine the single upset rates in individual pixels in the innermost layer of the ATLAS pixel detector, called IBL. SIngle pixel SEU cannot be observed directly through error reporting of the pixels as there is no such
Liu, Peilian
core  

PROMON: a profile monitor of software applications [PDF]

, 2005
Software techniques can be efficiently used to increase the dependability of safety-critical applications. Many approaches are based on information redundancy to prevent data and code corruption during the software execution.
Di Natale, Giorgio, Tagliaferri, Luca, Tibaldi, Clara, Benso, Alfredo, Prinetto, Paolo Ernesto, Di Carlo, Stefano   +5 more
core  

Atmospheric neutron inducing single event effects on AI chips manufacturing with 8 nm FinFET

Nuclear Engineering and Technology
--With the rapid advancement of artificial intelligence (AI) chips in diverse applications, single event effects (SEE) caused by high energy particles in ambient environment have emerged as a critical concern.
Yonghong Li, Jianan Tong, Weitao Yang, Zhiliang Hu, Lihua Mo, Tianjiao Liang, Chaohui He, Jinghui Lan   +7 more
doaj   +1 more source

Single Event Upset Studies on the APV6 Front End Readout Chip J Fulcher [PDF]

, 2008
The microstrip tracker for the CMS experiment at the LHC will be read out using radiation hard APV chips. During high luminosity running of the LHC the tracker will be exposed to particle fluxes up to 10 .
J Fulcher, M Raymond, Hall Raymond Imperial, D Bisello, M French, A Kaminski, L Jones, A Paccagnella, I Stavitski, J Wyss, G Hall   +10 more
core  

A multi-node-upset-resilient 14T SRAM with high read stability for space applications

Nuclear Engineering and Technology
This paper proposes a voltage-booster read-decoupled radiation-hardened 14T (BDRH14T) SRAM cell. In harsh environments such as space, radiation can flip the stored data in memory cells, resulting in soft errors, including single-event upset (SEU) and ...
Sung-Jun Lim, Sung-Hun Jo
doaj   +1 more source

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]

Micromachines (Basel), 2023
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc   +1 more source

Single Event Upset Mechanisms in Emerging Memory Technologies [PDF]

, 2014
The commercial memory industry, now more than ever, is looking at CMOS Flash alternatives to provide continued scaling of data storage elements. Meanwhile, radiation tolerant memory researchers and designers are investigating these new technologies to ...
Bennett, William Geoffrey
core  

Enhancement of Deep Neural Network Recognition on MPSoC with Single Event Upset. [PDF]

Micromachines (Basel), 2023
Yang W, Song W, Guo Y, Li Y, He C, Wu L, Wang B, Liu H, Shi G.   +8 more
europepmc   +1 more source

A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications. [PDF]

Micromachines (Basel), 2023
Yao R, Lv H, Zhang Y, Chen X, Zhang Y, Liu X, Bai G.   +6 more
europepmc   +1 more source

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory [PDF]

, 2016
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence.
LaBel, Kenneth, Ladbury, Raymond, Seidleck, Christina, Ladbury, Raymond L., Phan, Anthony, Kim, Hak, Wilcox, Edward, Chen, Dakai   +7 more
core   +1 more source