Results 111 to 120 of about 264 (165)
A script-enabled interactive checklist document for efficient management of electronic devices in a busy multimodality radiotherapy clinic. [PDF]
Pepin MD +4 more
europepmc +1 more source
Research on Precise Attitude Measurement Technology for Satellite Extension Booms Based on the Star Tracker. [PDF]
Sang P, Liu W, Cao Y, Xue H, Li B.
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Single-Event Upset (SEU) in a Dram with On-Chip Error Correction
IEEE Transactions on Nuclear Science, 1987The results are given of the first SEU measurements ever reported on IC devices with on-chip error correction. This method of SEU abatement could revolutionize the design of SEU-immune electronic systems.
J. A. Zoutendyk +4 more
exaly +2 more sources
An Adaptive Single Event Upset (SEU)-Hardened Flip-Flop Design
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2019In this paper, a new radiation hardened flip-flop design technique is proposed. The structure provides an possibility that the D-type flip-flop can be configured as an Single Event Upset (SEU) hardened or non-hardened flip-flop in a circuit based on the logic states of the sensitive nodes with RC filtering structure being involved or not, considering ...
Zhongjie Guo
exaly +2 more sources
Error detection and correction of single event upset (SEU) tolerant latch
2012 IEEE 18th International On-Line Testing Symposium (IOLTS), 2012Soft errors are a serious concern in state holder circuits at they can cause temporarily malfunctions. C-elements are one of the state holders that are widely used in asynchronous circuits. In this paper, our investigations focus on the vulnerability of different latch types based on C-elements with respect to soft errors.
Alex Yakovlev, A Bystrov
exaly +2 more sources
Single Event Upset (SEU) of Semiconductor Devices - A Summary of JPL Test Data
IEEE Transactions on Nuclear Science, 1983A summary of the data on single event upset (bit flips) for sixt-y device types, having data storage elements, that were tested by JPL through May, 1982, is presented. The data were taken from fifteen accelerator tests with both protons and heavier ions.
Donald K. Nichols +2 more
exaly +2 more sources
Effects of voltage stress on the single event upset (SEU) response of 65 nm flip flop
Microelectronics Reliability, 2016Abstract A newly integrated pulsed laser system has been utilized to investigate the effects of voltage stress on single event upset (SEU) of flip flop chain manufactured in 65 nm bulk CMOS technology. Laser mappings of the flip flop chain revealed that the SEU sensitive regions increased with laser energy.
P Perdu, K Sanchez, C L Gan
exaly +2 more sources
IEEE Transactions on Nuclear Science, 1997
The single event upset (SEU) sensitivity of certain types of linear microcircuits is strongly affected by bias conditions. For these devices, a model of upset mechanism and a method for SEU control have been suggested.
S D Pinkerton +2 more
exaly +2 more sources
The single event upset (SEU) sensitivity of certain types of linear microcircuits is strongly affected by bias conditions. For these devices, a model of upset mechanism and a method for SEU control have been suggested.
S D Pinkerton +2 more
exaly +2 more sources
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020
SRAM for space applications continues to be disturbed by highly energetic charged particles along with technology node scaling, that is the single-event upset (SEU) in terms of time perspective. A 14T read-write separation SRAM cell in low power mode is proposed using radiation hardened by design (RHBD) technique, not only robust to SEU but also ...
Igor Kharitonov
exaly +2 more sources
SRAM for space applications continues to be disturbed by highly energetic charged particles along with technology node scaling, that is the single-event upset (SEU) in terms of time perspective. A 14T read-write separation SRAM cell in low power mode is proposed using radiation hardened by design (RHBD) technique, not only robust to SEU but also ...
Igor Kharitonov
exaly +2 more sources
Measurement: Journal of the International Measurement Confederation, 2014
Abstract Commercial-Off-The-Shelf (COTS) Field Programmable Gate Array (FPGA) is becoming of increase interest in many field of high-tech applications for the possibility to implement low-cost solutions with simplicity and flexibility. Nevertheless, the presence of high energy incident particles (electrons, neutrons, protons and so on) can compromise
Lorenzo Ciani, Marcantonio Catelani
exaly +3 more sources
Abstract Commercial-Off-The-Shelf (COTS) Field Programmable Gate Array (FPGA) is becoming of increase interest in many field of high-tech applications for the possibility to implement low-cost solutions with simplicity and flexibility. Nevertheless, the presence of high energy incident particles (electrons, neutrons, protons and so on) can compromise
Lorenzo Ciani, Marcantonio Catelani
exaly +3 more sources

