Results 61 to 70 of about 8,001,430 (204)
Mechanisms and modeling of single-event upset [PDF]
The basic mechanisms of single-event upset are reviewed, including charge collection in silicon junctions and transistors, and properties of single-event upset in CMOS static random access memory (SRAM) cells.
Dodd, Paul E.
core
Towards a single event upset detector based on COTS FPGA
The Single Event Upset Detector (SEUD) is 3U CubeSat payload experiment that aims to achieve radiation tolerant computing through detection and correction of SEU bit flips on COTS SRAM FPGAs.
Ngo, Kalle, +5 more
core +1 more source
Abstract On 11 November 2025, at approximately 10:20 UTC, the 77th Ground Level Enhancement (GLE) occurred. This paper presents a comprehensive data set encompassing observations from ground‐level neutron monitors across the United Kingdom (UK), radiation monitors on radiosonde flights from the UK and the Netherlands, and radiation monitors onboard ...
F. Baird +17 more
wiley +1 more source
Single event upset hardening techniques [PDF]
Integrated circuit logic states are maintained by virtue of specific transistor combinations being either on'' (conducting) or off'' (nonconducting). High energy ion strikes on the microcircuit generate photocurrents whose primary detrimental effect is ...
Corbett, W. T., Weaver, H. T.
core
Despite being an important fraction of any animal population, juveniles are a severely understudied group. Juveniles often need to learn an array of skills that allow them to survive independently and do so while undertaking decisions that may impact their fitness, recruitment and survival, having therefore relevant demographic implications.
Manuela S. Rodrigues +6 more
wiley +1 more source
International audienceThis paper presents experimental characterization of the impact of negative bias temperature instability on the single-event upset sensitivity of SRAM cells embedded in a 65 nm CMOS test vehicle.
Perdu, Philippe +5 more
core +1 more source
Bit Upset of 25 nm NAND Flash Memory Induced by Heavy Ion Irradiation
In order to investigate the influence of heavy ion fluence on single event upsets (SEU) and the SEU cross-section in NAND Flash memory, as well as the multiple-cell upsets (MCU) due to heavy ion irradiation, experimental studies were performed on two ...
SHENG Jiangkun1,2;XU Peng1,*;QIU Mengtong2;DING Lili2;LUO Yinhong2;YAO Zhibin2;ZHANG Fengqi2;GOU Shilong2;WANG Zujun2
doaj +1 more source
New components in genetic regulation of age‐dependent compound leaf architecture in pea
Compound leaf development in pea (Pisum sativum). Summary Pea (Pisum sativum L.) is a classic model for compound leaf development. Pea leaves typically consist of a proximal series of paired lateral leaflets substituted distally by filiform tendrils, and the number of lateral organ pairs increases with ontogeny.
Jacqueline K. Vander Schoor +7 more
wiley +1 more source
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory [PDF]
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode.
Ladbury, Raymond +6 more
core
Impact of D-Flip-Flop Architectures and Designs on Single-Event Upset Induced by Heavy Ions
International audienceThis paper highlights the impact of design on the single-event upset (SEU) sensitivity of D-flip-flops (DFFs) used in a readout circuit (ROIC) under heavy ions. New experimental data obtained at the University of Louvain for several
S. Ducret +11 more
core +1 more source

