Results 71 to 80 of about 10,587 (214)
Soft Error-Tolerant and Highly Stable Low-Power SRAM for Satellite Applications
Applied SciencesAs CMOS technology has advanced, the transistor integration density of static random-access memory (SRAM) cells has increased. This has led to a reduction in the critical charge of sensitive nodes, making the SRAM cells more susceptible to soft errors ...
Jong-Yeob Oh, Sung-Hun Jo
doaj +1 more source
Bit Upset of 25 nm NAND Flash Memory Induced by Heavy Ion Irradiation
Yuanzineng kexue jishu, 2023 In order to investigate the influence of heavy ion fluence on single event upsets (SEU) and the SEU cross-section in NAND Flash memory, as well as the multiple-cell upsets (MCU) due to heavy ion irradiation, experimental studies were performed on two ...
SHENG Jiangkun1,2;XU Peng1,*;QIU Mengtong2;DING Lili2;LUO Yinhong2;YAO Zhibin2;ZHANG Fengqi2;GOU Shilong2;WANG Zujun2
doaj +1 more source
Effects of space radiation on electronic microcircuits [PDF]
The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined.
Kolasinski, W. A.
core +1 more source
Single Event Effects in the Pixel readout chip for BTeV [PDF]
, 2001 In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment
A Mekkaoui +16 more
core +2 more sources
Zoonoses and Public Health, Volume 73, Issue 3, Page 205-217, May 2026.ABSTRACT Introduction The emergence of methicillin‐resistant Staphylococcus species (MRS) poses a growing threat to both human and veterinary health. Methods We performed a comparative genomic characterisation of 49 methicillin‐resistant Staphylococcus isolates collected from humans, dogs, and cats in a veterinary hospital from Central Chile.
Daniel Garrido +7 more
wiley +1 more source
Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
IEEE Journal of the Electron Devices Society, 2020 This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
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Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory [PDF]
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence.
Chen, Dakai +6 more
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Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.A split‐gate amorphous oxide semiconductor (AOS) 2T0C DRAM effectively suppresses capacitive coupling and sneak‐path currents that occur in conventional 2T0C designs using a split‐gate read transistor. It shows a high on/off ratio, long retention time, and multiple conductance states.
Jeong‐Min Lee +3 more
wiley +1 more source
SEE Test and Data Analysis for Complex FPGA Systems [PDF]
Critical space applications require knowledge of single event upset (SEU) susceptibility (mission survivability). Generic SEU test and analysis techniques do not provide adequate data for survivability analysis.
Berg, Melanie, Campola, Michael
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People and Nature, Volume 8, Issue 4, Page 835-853, April 2026.Abstract Over the last 20 years, collaborative efforts have emerged with the intention of going beyond the pure capitalist economy, seeking to generate transformative community‐based changes that guarantee blue equity, fair distribution and well‐being.
Sílvia Gómez, Alfons Garrido
wiley +1 more source