Results 221 to 230 of about 41,599 (347)
An anisotropic dual S‐scheme heterojunction (C3N4/SubPc‐1/C3N5) is constructed to overcome the electron–proton kinetics mismatch in photocatalytic H2O2 production. The imide bridge serves as a dual channel for ultrafast electron transfer and proton relay, synergistically enabling efficient dual‐pathway oxygen reduction and achieving a high H2O2 ...
Bing Wang +7 more
wiley +1 more source
CIT kinase phosphorylation as significant regulatory node for cellular checkpoints. [PDF]
Thomas J +9 more
europepmc +1 more source
Soman increases neuronal COX-2 levels: Possible link between seizures and protracted neuronal damage
Mariana Angoa‐Pérez +6 more
openalex +2 more sources
Reply to Soman et al, Alffenaar et al, Metcalfe et al, and Raoult [PDF]
J. Peter Cegielski +5 more
openalex +1 more source
Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren +8 more
wiley +1 more source
Hemoadsorption: a new tool in neurotoxic poisoning. [PDF]
Hernandez-Vaquero J +3 more
europepmc +1 more source
This study achieves anisotropic thermal expansion tuning in Nd2(Co1‐xFex)17‐yCry compounds via a magnetoelastic strategy. Variable‐temperature synchrotron X‐ray diffraction reveals that increased Fe content induces switchable lattice responses. Compositional control reduces the volume expansion coefficient αV by 20% (x═0.7) and modulates TC (442–625 K),
Jiayuan Li +8 more
wiley +1 more source
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source

