Performance Assessment of a Junctionless Heterostructure Tunnel FET Biosensor Using Dual Material Gate [PDF]
Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years.
Haiwu Xie, Hongxia Liu
doaj +3 more sources
Fringe-fields-modulated double-gate tunnel-FET biosensor [PDF]
This paper aims to evaluate a groundbreaking bio-TFET that utilizes the fringe fields capacitance concept to detect neutral and charged biomolecules. While facilitating fabrication process and scalability, this innovative bio-TFET is able to rival the ...
Iman Chahardah Cherik, Saeed Mohammadi
doaj +3 more sources
Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET [PDF]
In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current.
Chan Shan +4 more
doaj +2 more sources
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET [PDF]
In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation.
Won Douk Jang +7 more
doaj +2 more sources
In-Built N+ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance [PDF]
In this paper, we present an in-built N+ pocket electrically doped tunnel FET (ED-TFET) based on the polarity bias concept that enhances the DC and analog/RF performance. The proposed device begins with a MOSFET like structure (n-p-n) with a control gate
Jun Li, Ying Liu, Su-fen Wei, Chan Shan
doaj +2 more sources
Analog and RF performance optimization for gate all around tunnel FET using broken-gap material [PDF]
Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device.
Pankaj Kumar +4 more
doaj +2 more sources
Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET [PDF]
Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology.
Zhaonian Yang +3 more
doaj +2 more sources
FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design [PDF]
In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
doaj +2 more sources
Ge Pocket-Based Dual Gate Tunnel FET: A Label-Free Biosensor [PDF]
M. Salim Wani +4 more
doaj +2 more sources
Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to
Hisashi Kino +2 more
doaj +1 more source

