Results 111 to 120 of about 606,110 (277)
Enhanced shot noise in carbon nanotube field-effect transistors
We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green functions ...
Betti, Alessandro +2 more
core +1 more source
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo +4 more
wiley +1 more source
Performance Investigation of Source Extension Approach on III–V Vertical Tunnel FET
A triple-metal-gate stacked III–V vertical tunnel field-effect transistor (TM-GS-VTFET) structure is examined. There are two different TM-GS-VTFETs: Device-A, which uses a source pocket, and Device-B, which uses a new source extension approach ...
M. Saravanan, Eswaran Parthasarathy
doaj +1 more source
TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge ...
Jheng-Sin Liu +2 more
doaj +1 more source
The structure, properties, preparation methods, and characterization techniques of BP. As a typical 2D layered material, black phosphorus (BP) demonstrates exceptional promise in various fields, particularly in energy storage for alkali metal‐ion batteries. However, its distinctive structure and properties, together with the compositional complexity of
Yunqing Wang +7 more
wiley +1 more source
This review first introduces the fundamental concepts of artificial synapses and synaptic plasticity, then discusses the device structures and operation mechanisms of optoelectronic synapses based on two‐dimensional transition metal dichalcogenides, highlights their applications in neuromorphic vision systems and computing, and concludes with key ...
Xiaona Sun +3 more
wiley +1 more source
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho +11 more
wiley +1 more source
Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications
RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
doaj +1 more source
System for the measurement of ultra-low stray light levels [PDF]
An apparatus is described for measuring the effectiveness of stray light suppression light shields and baffle arrangements used in optical space experiments and large space telescopes.
Brealt, R. P. +7 more
core +1 more source
Spin‐sensitive multifunctional devices based on lateral graphene/MoS2 heterostructures
This study highlights the multifunctional capabilities of devices based on lateral graphene/MoS2 heterostructures and provides theoretical guidance for the design and fabrication of high‐performance rectifiers, spin filters, and optoelectronic devices based on various 2D lateral heterostructures. Abstract Using first‐principles calculations and quantum
Shun Song +5 more
wiley +1 more source

