Results 131 to 140 of about 606,110 (277)

Large Unsaturated Magnetoresistance in Gated MoS2 Flakes

Small, EarlyView.
Magnetotransport investigation of layered MoS2 crystals in field‐effect devices reveals strong dependence on thickness and carrier density. Monolayer MoS2 exhibits the highest magnetoresistance of 680%. A combination of density functional theory and Boltzmann transport equation simulations shows that band transport is not causing the magnetic behavior,
Anoir Hamdi, Dominik Dettmann, Andrés Rafael Botello‐Méndez, Atiye Pezeshki, Lilian Skokan, Andreas Ruediger, Gianluca Fiori, Zeila Zanolli, Emanuele Orgiu   +8 more
wiley   +1 more source

Carrier Mapping in Sub‐2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy

Small Methods, EarlyView.
Within this work, advancements in scanning spreading resistance microscopy (SSRM) allow charge carrier mapping within 5.5 nm‐thick nanosheet channels. Devices subjected to rapid thermal annealing at 950°C show ∼ 5 nm enhanced phosphorus diffusion, with profiles in close agreement with semi‐atomistic process simulations.
Andrea Pondini, Pierre Eyben, Lennaert Wouters, Albert Minj, Thomas Hantschel, Philippe Matagne, Jérôme Mitard, Anne Verhulst   +7 more
wiley   +1 more source

Chip‐Scale Graphene/IGZO Cold Source FET Array Enabling Sub‐60 mV dec−1 Super‐Steep Subthreshold Swing

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
Super‐steep subthreshold swing (SS) below 60 mV dec−1 is demonstrated in graphene/IGZO cold source transistor arrays. Linear density of states with Dirac cone in graphene suppressed the Boltzmann thermal tail, while high‐k HfO2 dielectric having small body factor enhanced gating efficiency, hereby further reducing SS. An average SS of ≈46.4 mV dec−1 is
Seyoung Oh, Ojun Kwon, Jongwon Yoon, Eunjeong Cho, Min Jeong Kim, Wondeok Seo, Minhee Kim, Shinhoi Kim, Yeongeun Kwon, Yung Joon Jung, Kyungrok Kang, Woojin Park, Yonghun Kim, Byungjin Cho   +13 more
wiley   +1 more source

Silver Ions as Ambipolar Dopants in InAs Nanocrystal Solids

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
Ag⁺ ions post‐introduced into InAs nanocrystal films act as ambipolar dopants whose effect depends on host polarity and dopant concentration. In n‐type InAs nanocrystal films, Ag⁺ occupies interstitial sites to yield n‐type doping effect, whereas in Zn‐doped p‐type InAs nanocrystal films, it first forms p‐type surface doping effect and later induces n ...
Hwichan Cho, Hyoin Kim, Meeree Kim, Mahnmin Choi, Hyunwoo Jo, Da In Kim, Byeongjae Kang, SeungHwan Roh, Hyunjung Kim, Ji‐Sang Park, Sohee Jeong, Moon Sung Kang   +11 more
wiley   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

Tunneling‐Controlled Fusion of Short‐ and Long‐Term Memory in SiO2/HfO2‐Based Neuromorphic Device for Time‐Series Prediction

Advanced Science, Volume 13, Issue 7, 3 February 2026.
Based on trap‐assisted tunneling, the devices can fuse STM/LTM, where the low switching energy of 1 pJ and stable low‐power retention (0.2 % loss ratio and 3.05 × 10−11 W) is achieved. Training in a long short‐term memory network it allows to analysis time‐series data and then makes precise long‐term predictions with an error ratio of 4.465 ...
Chengdong Yang, Lihua Xu, Linlin Su, Yue Wu   +3 more
wiley   +1 more source

Heterointerface‐Functionalized Photoelectric Response of Metal‐Oxide Schottky Photodiode for Intelligent Fire Detection

Advanced Science, Volume 13, Issue 9, 13 February 2026.
A heterointerface‐functionalized Schottky photodiode (HF‐SPD) is developed to explore the photoelectric capabilities of low‐temperature oxide semiconductors. Besides the remarkable UV detection capability, the bias‐tunable photo response endows HF‐SPD with the unique wavelength selectivity.
Yuyang Cai, Zhiwei Zheng, Zhiwu Zhong, Yuhan Zhang, Tengyan Huang, Yucheng Cao, Dawei Zheng, Yen Hung Lin, Fion Sze Yan Yeung, Kuan‐Chang Chang, Jie Chen, Hoi Sing Kwok, Lei LU, Yufeng Jin   +13 more
wiley   +1 more source

Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

Small, Volume 22, Issue 9, 12 February 2026.
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi, Umer Ahsan, Muhammad Farooq Khan, Jamal Aziz, Payal Chauhan, Paweł Piotr Michałowski, Yuan Chen, Goki Eda, Martin Loula, Kalyan Jyoti Sarkar, Zdenek Sofer   +10 more
wiley   +1 more source

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]

Micromachines (Basel)
Huang J, Liu H, Chen S, Wang S, Chong C, Liu C.   +5 more
europepmc   +1 more source

Energy-efficient neuromorphic system using novel tunnel FET based LIF neuron design for adaptable threshold logic and image analysis applications. [PDF]

Sci Rep
Bashir F, Zahoor F, Alzahrani A, Abbas H.   +3 more
europepmc   +1 more source