Results 141 to 150 of about 606,110 (277)

Scalability assessment of Group-IV mono-chalcogenide based tunnel FET. [PDF]

Sci Rep, 2018
Brahma M, Kabiraj A, Saha D, Mahapatra S.   +3 more
europepmc   +1 more source

Retraction notice to "Al₂O₃/ZrO₂ dual-dielectric Gr/CNT nanoribbon vertical tunnel FET based biosensor for genomic classification and S-protein detection in SARS-CoV-2" [Heliyon 10 (2024) e30077]. [PDF]

Heliyon
Venkatesh M, Parthasarathy P.
europepmc   +1 more source

Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain. [PDF]

Beilstein J Nanotechnol
Kanagarajan KS, Sadhasivan DK.
europepmc   +1 more source

High-speed and Non-volatile Memory Devices Using a Macroscopic Polarized Stack Consisting of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barriers

, 2007
Kurihara, T., Mizuta, Hiroshi, Niikura, H., Oda, S., Saito, D., Tsuchiya, Yoshishige   +5 more
core  

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

Preparation and Performance Exploration of MoS₂/WSe₂ Van Der Waals Heterojunction Tunneling Field-Effect Transistor. [PDF]

Micromachines (Basel)
Chong C, Liu H, Wang S, Chen S, Yan C.
europepmc   +1 more source

Study of dielectric modulated dual source triple gate TFET for biosensing applications. [PDF]

Discov Nano
Cui G, Xu H.
europepmc   +1 more source

High-κ samarium oxysulfate dielectric for two-dimensional electronics with enhanced gate coupling. [PDF]

Nat Commun
Yuan J, Jian C, Gong Y, Ju Q, Cai Q, Kang J, Liu W.   +6 more
europepmc   +1 more source

Engineering the ferroelectric polarization to optimize the GIDL and negative output conductance in negative capacitance FET. [PDF]

Sci Rep
Thota VS, Moparthi S, Ghosh K.
europepmc   +1 more source