Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering
IEEE Journal of the Electron Devices Society, 2021 In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations.
Hyun Woo Kim, Daewoong Kwon
doaj +2 more sources
Ge/GaAs Based Negative Capacitance Tunnel FET Biosensor: Proposal and Sensitivity Analysis [PDF]
Silicon, 2022 A highly sensitive, accurate, fast and power efficient biosensor is the need of the hour. Undoubtedly, dielectrically modulated (DM) tunnel FET (TFET) assures better sensitivity as compared to MOSFET biosensors in case of label-free biosensing.
Paul O +4 more
europepmc +2 more sources
Design and optimization of vertical nanowire tunnel FET with electrostatic doping
Engineering Research Express, 2023 While dealing with the nanoscale regime, most devices make sacrifices in terms of performance. So to meet the performance requirements, Electrostatic doped Vertical Nanowire Tunnel Field Effect Transistor (E-VNWTFET) is proposed and analysed in this work.
A. Bhardwaj +4 more
semanticscholar +1 more source
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects. [PDF]
Nano Lett, 2020 Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by
Saeidi A +6 more
europepmc +2 more sources
Ultralow-Voltage Bilayer Graphene Tunnel FET [PDF]
IEEE Electron Device Letters, 2009 In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of ...
FIORI, GIANLUCA, IANNACCONE, GIUSEPPE
openaire +3 more sources
Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer
Applied Sciences, 2020 Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
doaj +1 more source
IEEE Transactions on Nanobioscience, 2021 This work reports a vertically extended drain double gate Si0.5Ge0.5 source tunnel FET for the biomolecules detection using its electrical properties modulation in presence of biomolecules like cell, DNA, protein, etc.
Kumari Nibha Priyadarshani +1 more
semanticscholar +1 more source
1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET Design
IEEE Journal of the Electron Devices Society, 2015 In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On ...
Arnab Biswas, Adrian M. Ionescu
doaj +1 more source
Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET
IEEE Access, 2022 We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation.
Abdullah Al Mamun Mazumder +3 more
doaj +1 more source
Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling [PDF]
, 2013 We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure.
D'Amico, Pino +3 more
core +2 more sources