Results 31 to 40 of about 606,110 (277)
Silicon, 2021 The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET (TMSG – JL – TFET) based 6 T SRAM structure is demonstrated by employing Germanium (Ge) and High-K gate dielectric material.
G. Priya +3 more
semanticscholar +1 more source
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
IEEE Journal of the Electron Devices Society, 2016 A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen +4 more
doaj +1 more source
Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity
Chemosensors, 2023 This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully
Sagarika Choudhury +5 more
doaj +1 more source
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
npj Quantum Information, 2022 We demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.
P. L. Bavdaz +8 more
doaj +1 more source
Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications [PDF]
, 2017 In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption.
Moll Echeto, Francisco de Borja +2 more
core +2 more sources
Opportunties and challenges of tunnel FETs
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016 Sustaining of Moore's Law over the next decade will require not only continued scaling of the physical dimensions of transistors but also performance improvement and aggressive reduction in power consumption. Hetero-junction Tunnel FET (TFET) have emerged as promising transistor candidates for supply voltage scaling down to sub-0.5V due to the ...
Rahul Pandey +2 more
openaire +1 more source
Study of an asymmetry tunnel FET biosensor using junctionless heterostructure and dual material gate
Engineering Research Express, 2022 In recent years, label-free sensors have been studied extensively for biomolecule detections. Label-free biosensors based on MOSFETs could achieve high detection sensitivity, the subthreshold swing of such sensors cannot break the limitation of 60 mV Dec−
Haiwu Xie
semanticscholar +1 more source
, 2017 Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics.
Bouchiat, Vincent +12 more
core +5 more sources
npj 2D Materials and Applications, 2020 Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly ...
N. Oliva +5 more
semanticscholar +1 more source
Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts
, 2007 In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and thermal) noise.
Anantram M P +11 more
core +1 more source