Results 41 to 50 of about 606,110 (277)
Multiple facets of tightly coupled transducer-transistor structures [PDF]
, 2015 The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials ...
Dahiya, Ravinder, Heidari, Hadi
core +1 more source
IEEE Journal of the Electron Devices Society, 2021 In this paper, the influences of channel transport on the output characteristic in sub-100nm heterojunction tunnel FET have been investigated through TCAD simulation.
Yunhe Guan +3 more
doaj +1 more source
Switching Mechanism and the Scalability of vertical-TFETs
, 2017 In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET
Chen, Fan +4 more
core +1 more source
Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications
IEEE Journal of the Electron Devices Society, 2015 Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified.
Qing-Tai Zhao +11 more
doaj +1 more source
Transport in Graphene Tunnel Junctions [PDF]
, 2010 We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene.
C. E. Malec +4 more
core +3 more sources
Advanced Functional Materials, EarlyView.A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
, 2017 The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A. +10 more
core +1 more source
Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET
IEEE Transactions on Electron Devices, 2020 To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In particular, we demonstrate that the temperature dependence of a BTT-dominated subthreshold swing (SS) is in ...
Bizindavyi, Jasper +3 more
openaire +2 more sources
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
Two‐Dimensional Materials as a Multiproperty Sensing Platform
Advanced Functional Materials, EarlyView.Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana +11 more
wiley +1 more source