Results 51 to 60 of about 606,110 (277)

Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations

IEEE Journal of the Electron Devices Society, 2018
A half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was fabricated and characterized to explore the feasibility and functionality of 6T-SRAM based on TFETs. Outward-faced n-TFETs are used as access-transistors.
G. V. Luong, S. Strangio, A. T. Tiedemann, P. Bernardy, S. Trellenkamp, P. Palestri, S. Mantl, Q. T. Zhao   +7 more
doaj   +1 more source

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

, 2010
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage.
Aydin, Bhuwalka, Bhuwalka, Bhuwalka, Boucart, Choi, Dhar, Dobrovolsky, Hansch, Hurkx, Lim, M. Jagadesh Kumar, Nagavarapu, Nirschl, Numata, Reddick, Sedlmaier, Shen, Sneh Saurabh, Takagi, Tehrani, Uemura, Wang, Wang, Zhang, Zhang   +25 more
core   +1 more source

A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

Silicon, 2021
In this article, a distinctive charge plasma (CP) technique is employed to design two doping-less dual gate tunnel field effect transistors (DL-DG-TFETs) with Si 0.5 Ge 0.5 and Si as source material.
Varun Mishra, Y. Verma, S. Gupta, Vikas Rathi   +3 more
semanticscholar   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

, 2013
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3 at ...
Ando, Y., Fujita, Y., Hamaya, K., Maeda, Y., Masaki, K., Miyao, M., Sawano, K., Yamada, S.   +7 more
core   +1 more source

A lateral resonant tunneling FET

Superlattices and Microstructures, 1988
Abstract A lateral resonant tunneling FET (RTFET) is proposed. The RTFET has three closely spaced gates. The outer gates control the barrier heights, and the inner gate controls the potential of the quantum well. These gates are capacitively coupled to the barriers and the well, therefore, the gate currents are very small.
S.Y. Chou, E. Wolak, J.S. Harris, R.F.W. Pease   +3 more
openaire   +1 more source

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

Advanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods, Ho‐Chan Jang, Jun‐Hui Choi, Min Woo Kim, Hyunjin Lee, Tae‐Hoon Kim, Keun Heo, Hyung Jun Kwun, Taehun Lee, Yoon Kyeung Lee, Sang Hoon Lee, Seung‐Il Kim, Woonhyuk Baek, Sukang Bae, Ji‐Yun Moon, Jae‐Hyun Lee   +15 more
wiley   +1 more source

Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors

, 2010
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport.
Ai, Nan, Begliarbekov, Milan, Choi, Daniel S., Kumar, Kitu, Song, Qiang, Strauf, Stefan, Sul, Onejae, Yang, Eui-Hyeok   +7 more
core   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2018
Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin-orbit coupling (SOC).
Peter A. Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov   +9 more
doaj   +1 more source