Results 71 to 80 of about 606,110 (277)
Discover Nano, 2023 In this paper, we propose an inductive line tunneling FET using Epitaxial Tunnel Layer with Ge-Source and Charge Enhancement Insulation (CEI ETL GS-iTFET).
Jyi-Tsong Lin, Yen-Chen Chang
doaj +1 more source
A Functional 2D Carbon Allotrope Combining Nanoporous Graphene and Biphenylene Segments
Advanced Materials, EarlyView.The synthesis of a novel nanoporous graphene (NPG) is reported with biphenylene segments via thermal fusion of 12‐armchair porous graphene nanoribbons grown on gold surfaces. Characterization using STM, AFM, and DFT reveals low‐defect semiconducting behaviour and tunable band gaps.
Paula Angulo‐Portugal +14 more
wiley +1 more source
Multiple Functionality in Nanotube Transistors
, 2002 Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions.
A. Odintsov +21 more
core +1 more source
High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics
Advanced Materials, EarlyView.High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang +10 more
wiley +1 more source
Steep Slope Field Effect Transistors Based on 2D Materials
Advanced Electronic MaterialsWith field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down ...
Laixiang Qin +8 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2015 This paper investigates and compares the impacts of metal-gate work-function variation (WFV) on III-V heterojunction tunnel FET (HTFET), homojunction TFET, and FinFET devices using a novel Voronoi method to capture the realistic metal-gate grain patterns
Chih-Wei Hsu +3 more
doaj +1 more source
An Exchange-Coupled Donor Molecule in Silicon
, 2013 Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7].
Calderón, Maria J. +5 more
core +1 more source
Advances in steep-slope tunnel FETs [PDF]
2016 46th European Solid-State Device Research Conference (ESSDERC), 2016 Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building blocks for future low-power integrated circuits and CMOS technology devices. Here we report on recent advances in vertical TFETs using III–V/Si heterojunctions.
Katsuhiro Tomioka +2 more
openaire +1 more source
Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications
Advanced Materials, EarlyView.This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li +6 more
wiley +1 more source
Micro and Nano EngineeringHybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage.
Kai-Lin Chu +4 more
doaj +1 more source